Ar room temperatures an intrinsic Si sample is doped with donor impurities with donor concentration of 1016/cm3. What will be majority and minority carrier concentration at thermal equilibrium?
Ar room temperatures an intrinsic Si sample is doped with donor impurities with donor concentration of 1016/cm3.
What will be majority and minority carrier concentration at thermal equilibrium?
At room temperature (300 K), if n and p represent the equilibrium electron and hole concentration respectively, then according to the law of mass action, the following equation can be written:
Since donor impurities are added and the concentration of donor impurities is much larger than the intrinsic carrier concentration, the semiconductor will become an n-type semiconductor meaning that the electrons will become the majority carriers and the holes will become the minority carriers.
The equilibrium electron concentration will be controlled by the donor impurities and assuming total ionization of the donors, the value of the equilibrium electron concentration will be
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