An n-type silicon bar 0.1 cm long and 100 µm² i cross-sectional area has a majority carrier concentration of 5 x 1020/m² and the carrier mobility is 0.13 m²/V-s at 300 K. If the charge of an electron is 1.5x 10 ¹9 coulomb, then the resistance of the bar is

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An n-type silicon bar 0.1 cm long and 100 µm² i cross-sectional area has a majority
carrier concentration of 5 × 1020/m² and the carrier mobility is 0.13 m²/V-s at 300
K. If the charge of an electron is 1.5 × 10-¹9 coulomb, then the resistance of the bar
is
Transcribed Image Text:2 An n-type silicon bar 0.1 cm long and 100 µm² i cross-sectional area has a majority carrier concentration of 5 × 1020/m² and the carrier mobility is 0.13 m²/V-s at 300 K. If the charge of an electron is 1.5 × 10-¹9 coulomb, then the resistance of the bar is
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