2. An abrupt silicon p-n junction consists of a p-type region containing 10° cm acceptors andan n-type region containing also 1016 em acceptors in addition to 10" cm³ donors.a) Calculate the themal equilibrium density of electrons and holes in the p-type region aswell as both densities in the n-type region.b) Calculate the built-in potential of the p-n junction.c) Calculate the built-in potential of the p-n junction at 100°C.

Solution- In P- type region density of electron and holes , Intrinsic carrier concentration density…

an n-type region containing also 101° cm acceptors in addition to 107 cm3 don a) Calculate the thermal equilibrium density of electrons and holes in the well as both densities in the n-type region. b) Calculate the built-in notential of the n-n jumction

an n-type region containing also 101° cm acceptors in addition to 107 cm3 don a) Calculate the thermal equilibrium density of electrons and holes in the well as both densities in the n-type region. b) Calculate the built-in notential of the n-n jumction

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

Differential amplifier

There are two amplifying stages with common degeneration in a differential amplifier.

Question

2. An abrupt silicon p-n junction consists of a p-type region containing 10° cm acceptors and
an n-type region containing also 1016 em acceptors in addition to 10" cm³ donors.
a) Calculate the themal equilibrium density of electrons and holes in the p-type region as
well as both densities in the n-type region.
b) Calculate the built-in potential of the p-n junction.
c) Calculate the built-in potential of the p-n junction at 100°C.

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3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec – EF = 0.21 eV on the n-side and EF – Ey = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K. Find the doping density in the n-side in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here
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This about PN Junctions of semiconductors.
A step p-n junction is made in silicone with the following specifications: The current density for electrons (Jno ) is 15 A / cm?, and the current density for holes (Jpo) is 8 A / cm', electron and hole mobility are 0.1 m:V"is"! and 0.5 m:V-is"- respectively, the hole's diffusion constant (20 cmls), the electron's diffusion constant ( 30 cm ls), the relative permittivity ( E, = 11.7), T, and T, are 2 x 106 and 4 x 105 respectively, the hole's diffusion length equals ( 200um),the electron's diffusion length equals (300lm), and the intrinsic carriers concentration ( n,= 1,5x1010 cm*). Calculate the following: 1- The built-in potential Vp. 2- The concentration of the majority and the minority carriers in both P-and N-regions. 3- The total depletion region width of the junction. 4- The maximum electric field at zero bias and 5V bias.
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Answer all the items. Thanks!