An abrupt Si p-n junction is formed with n, = 1*1015 / cm3, n; = 1*1010 / cm³, ɛo = 8.854*10 14 F/cm &, = 11.8, kT/q = 26 mV and q = 1.6*10-19 C, if xn = 4 µm then the electric field at the junction is: a. t-- 2.756 * 103 V/cm O b. E = - 6.126 * 104 V/cm O. -+ 4.125 * 102 V/cm Od. E = + 6.126 * 104 V/cm

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An abrupt Si p-n junction is formed with n, = 1*1015 / cm³, n; = 1*1010 / cm³, ɛ0 = 8.854*10-
14 F/cm ɛ, = 11.8, kT/q = 26 mV and q = 1.6*10-19 C, if xn = 4 um then the electric field at
the junction is:
a. E-- 2.756 * 103³ V/cm
Ob.
E =
- 6.126 * 104 V/cm
Oc.
E = + 4.125 * 102 V/cm
O d.
E = + 6.126 * 104 V/cm
Transcribed Image Text:An abrupt Si p-n junction is formed with n, = 1*1015 / cm³, n; = 1*1010 / cm³, ɛ0 = 8.854*10- 14 F/cm ɛ, = 11.8, kT/q = 26 mV and q = 1.6*10-19 C, if xn = 4 um then the electric field at the junction is: a. E-- 2.756 * 103³ V/cm Ob. E = - 6.126 * 104 V/cm Oc. E = + 4.125 * 102 V/cm O d. E = + 6.126 * 104 V/cm
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