After a silicon wafer reaches equilibrium with a gas of copper atoms, its surface is partially covered by copper atoms. Select the correct statements. O a. If the temperature of the wafer is increased, but the pressure of the gas is held constant, the number of copper atoms on the surface of silicon will decrease. O b. Copper atoms in the gas and copper atoms on the silicon surface have different chemical potentials because their chemical interactions with their surroundings are different. O. Copper atoms will eventually fill the entire surface of silicon if we wait long enough because copper atoms lower their energy by adsorbing to the silicon surface. Od. Copper atoms on the silicon surface have a larger chemical potential than copper atoms in the gas because the density of copper atoms on the surface is larger. D e. Copper atoms in the gas and copper atoms on the silicon surface have the same chemical potential because the system is in equilibrium.
After a silicon wafer reaches equilibrium with a gas of copper atoms, its surface is partially covered by copper atoms. Select the correct statements. O a. If the temperature of the wafer is increased, but the pressure of the gas is held constant, the number of copper atoms on the surface of silicon will decrease. O b. Copper atoms in the gas and copper atoms on the silicon surface have different chemical potentials because their chemical interactions with their surroundings are different. O. Copper atoms will eventually fill the entire surface of silicon if we wait long enough because copper atoms lower their energy by adsorbing to the silicon surface. Od. Copper atoms on the silicon surface have a larger chemical potential than copper atoms in the gas because the density of copper atoms on the surface is larger. D e. Copper atoms in the gas and copper atoms on the silicon surface have the same chemical potential because the system is in equilibrium.
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Transcribed Image Text:QUESTION 1
After a silicon wafer reaches equilibrium with a gas of copper atoms, its surface is partially covered by copper atoms.
Select the correct statements.
O a. If the temperature of the wafer is increased, but the pressure of the gas is held constant, the number of copper atoms on the surface of silicon will
decrease.
O b. Copper atoms in the gas and copper atoms on the silicon surface have different chemical potentials because their chemical interactions with their
surroundings are different.
Oc. Copper atoms will eventually fill the entire surface of silicon if we wait long enough because copper atoms lower their energy by adsorbing to the silicon
surface.
Od. Copper atoms on the silicon surface have a larger chemical potential than copper atoms in the gas because the density of copper atoms on the surface
is larger.
O e. Copper atoms in the gas and copper atoms on the silicon surface have the same chemical potential because the system is in equilibrium.
QUESTION 2
A gas of neon atoms is in equilibrium with a solid surface at T= 300 K and 105 Pa. Match the fraction f of adsorbed atoms with the binding energy A values
given below. Note the variation with A.
A. 0 <fs0.1
B. 0.1 <fs0.2
c. 0.2 < fs 0.3
D. 0.3 <fs0.4
A. V A= 0.3 eV
B. v A= 0.35 eV
F. V A= 0.4 eV
. v A= 0,5 eV
E. 0.4 <fs0.5
F. 0.5 <fs0.6
G. 0.6 < fs0.7
H. 0.7 < fs0.8
1. 0.8 <fs0.9
J. 0.9 <fs1
QUESTION 3
Consider a gas in equilibrium with a solid surface. What is the fraction fof adsorbed atoms when the chemical potential has the value u =-A, where A is the
binding energy of an atom to the surface?
Provide
numerical answer in normal form.
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