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A4 cm long piece of Si with a cross-sectional area of 0.01 cm is doped with donors at 1016/em, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10""C; o = qn; R= pL/A; v= ) %3D

A4 cm long piece of Si with a cross-sectional area of 0.01 cm is doped with donors at 1016/em, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10""C; o = qn; R= pL/A; v= ) %3D

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JA 4 cm long piece of Si with a cross-sectional area of 0.01 cm is doped with donors at 1016/cm', and has a resistance of 8 ohms. Calculate the clectron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10"" C; o = qnµ; R= pL/A; v= u)
Transcribed Image Text:JA 4 cm long piece of Si with a cross-sectional area of 0.01 cm is doped with donors at 1016/cm', and has a resistance of 8 ohms. Calculate the clectron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10"" C; o = qnµ; R= pL/A; v= u)
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