A silicon pn junction at zero bias has dopant concentration of N₁ = 3 x 10¹7cm-3 and Nd 4x10¹6 cm3 at T-300 K. Assume V = 0.77 V. Calculate x₁, xp and I' of the depletion region. a.

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A silicon pn junction at zero bias has dopant concentration of N₁ = 3 x 1017 cm-3 and №d=
4 x 10¹6 cm-3 at T-300 K. Assume Vbt = 0.77 V.
Calculate xn, xp and I of the depletion region.
a.
Transcribed Image Text:A silicon pn junction at zero bias has dopant concentration of N₁ = 3 x 1017 cm-3 and №d= 4 x 10¹6 cm-3 at T-300 K. Assume Vbt = 0.77 V. Calculate xn, xp and I of the depletion region. a.
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