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A silicon p'-n junction having Np = 5 x 106 cm", n; = 1010 cm", e, = 11.7 has a critical electrical field for breakdown is equal to 5.7 x 105 v/cm. The breakdown voltage for silicon p'-n is

A silicon p'-n junction having Np = 5 x 106 cm", n; = 1010 cm", e, = 11.7 has a critical electrical field for breakdown is equal to 5.7 x 105 v/cm. The breakdown voltage for silicon p'-n is

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A silicon p'-n junction having Np = 5 x 1010 cm, n; = 1010 cm, 6, = 11.7 has a critical electrical field for breakdown is equal to 5.7 x 105 v/cm. The breakdown voltage for silicon p'-n is O 21 V O 20 V O 24 V O 22 V
Transcribed Image Text:A silicon p'-n junction having Np = 5 x 1010 cm, n; = 1010 cm, 6, = 11.7 has a critical electrical field for breakdown is equal to 5.7 x 105 v/cm. The breakdown voltage for silicon p'-n is O 21 V O 20 V O 24 V O 22 V
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