A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³ and Nd = 10¹5 cm-³ and biased such that VD = .2V. Determine the current through the diode. Show your work!
A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³ and Nd = 10¹5 cm-³ and biased such that VD = .2V. Determine the current through the diode. Show your work!
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Transcribed Image Text:A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that:
Na = 4 x10¹4 cm³³ and Nd = 10¹5 cm³³ and biased such that VD = .2V.
Determine the current through the diode. Show your work!
Parameters to use
K = 1.38 × 10−23 J/K
q= 1.6 × 10-19 coulombs
For Silicon at room temperature(T = 300°K):
EG = 1.12eV
ni = 1 × 10¹0cm-3
€Si = K sit0 = (11.8) (8.85 × 10-14)F/cm
Dp = 10cm²/sec
fn = 1230.77cm²/V - sec, Dn = 32cm²/sec
Tn = 2.0 × 10−4sec,
Tp=9.0 × 10-5 sec
En = 8.0 × 10−²cm, Łp = 3.0 × 10-²cm
Hp = 384.62cm²/V – sec,
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