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A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³ and Nd = 10¹5 cm-³ and biased such that VD = .2V. Determine the current through the diode. Show your work!

A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³ and Nd = 10¹5 cm-³ and biased such that VD = .2V. Determine the current through the diode. Show your work!

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A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³³ and Nd = 10¹5 cm³³ and biased such that VD = .2V. Determine the current through the diode. Show your work! Parameters to use K = 1.38 × 10−23 J/K q= 1.6 × 10-19 coulombs For Silicon at room temperature(T = 300°K): EG = 1.12eV ni = 1 × 10¹0cm-3 €Si = K sit0 = (11.8) (8.85 × 10-14)F/cm Dp = 10cm²/sec fn = 1230.77cm²/V - sec, Dn = 32cm²/sec Tn = 2.0 × 10−4sec, Tp=9.0 × 10-5 sec En = 8.0 × 10−²cm, Łp = 3.0 × 10-²cm Hp = 384.62cm²/V – sec, -
Transcribed Image Text:A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³³ and Nd = 10¹5 cm³³ and biased such that VD = .2V. Determine the current through the diode. Show your work! Parameters to use K = 1.38 × 10−23 J/K q= 1.6 × 10-19 coulombs For Silicon at room temperature(T = 300°K): EG = 1.12eV ni = 1 × 10¹0cm-3 €Si = K sit0 = (11.8) (8.85 × 10-14)F/cm Dp = 10cm²/sec fn = 1230.77cm²/V - sec, Dn = 32cm²/sec Tn = 2.0 × 10−4sec, Tp=9.0 × 10-5 sec En = 8.0 × 10−²cm, Łp = 3.0 × 10-²cm Hp = 384.62cm²/V – sec, -
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