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A Si sample is doped with Donor atoms at a concentration of 1*1015 / cm3, if n; = 1*1010 / cm3, Hn = 1350 cm?/V.s, H, = 450 cm?/V.s, and q = 1.6*10-19 C, then the conductivity of the sample is : 0.045 (0.cm). O b. 0.135 (N.cm). 0.135 (N.cm)-1. Od. 0.045 (0.cm)-1.

A Si sample is doped with Donor atoms at a concentration of 1*1015 / cm3, if n; = 1*1010 / cm3, Hn = 1350 cm?/V.s, H, = 450 cm?/V.s, and q = 1.6*10-19 C, then the conductivity of the sample is : 0.045 (0.cm). O b. 0.135 (N.cm). 0.135 (N.cm)-1. Od. 0.045 (0.cm)-1.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A Si sample is doped with Donor atoms at a concentration of 1*1015 / cm³, if n; = 1*1010/ cm3, Hn = 1350 cm?/V.s, µp = 450 cm?/V.s, and q = 1.6*10-19 C, then the conductivity of the sample is : a. 0.045 (0.cm). Ob. 0.135 (N.cm). 0.135 (N.cm)-1. d. 0.045 (0.cm)-1.
Transcribed Image Text:A Si sample is doped with Donor atoms at a concentration of 1*1015 / cm³, if n; = 1*1010/ cm3, Hn = 1350 cm?/V.s, µp = 450 cm?/V.s, and q = 1.6*10-19 C, then the conductivity of the sample is : a. 0.045 (0.cm). Ob. 0.135 (N.cm). 0.135 (N.cm)-1. d. 0.045 (0.cm)-1.
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