A power semiconductor device consists of a region doped with Arsenic atoms such that the concentration of electrons is n0 = 4.9 x 1018 cm-3. The device dissipates power which generates heat, thus heating the silicon crystal to a temperature of T = 407 °K. Use: m*n = 1.08 m0, m*p = 0.56 m0, Egap = 1.12 eV = Ec with Ev = 0 as the reference, and m0 is the free electron mass = 9.11 x 10-31 kg. Assume Boltzmann statistics applies. Do the following:(a) Find the intrinsic Fermi level EFi(b) Find the intrinsic carrier concentration ni = pi(c) Find EF - Ev(d) Find Ec - EF(e) Calculate the respective minority carrier concentrations n0 or p0

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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A power semiconductor device consists of a region doped with Arsenic atoms such that the concentration of electrons is n₀ = 4.9 x 10¹⁸ cm^-3. The device dissipates power which generates heat, thus heating the silicon crystal to a temperature of T = 407 °K. Use: m*_n = 1.08 m₀, m*_p = 0.56 m₀, E_gap = 1.12 eV = Ec with Ev = 0 as the reference, and m₀ is the free electron mass = 9.11 x 10^-31 kg. Assume Boltzmann statistics applies. Do the following:

(a) Find the intrinsic Fermi level E_Fi

(b) Find the intrinsic carrier concentration n_i = p_i

(d) Find E_c - E_F

(e) Calculate the respective minority carrier concentrations n₀ or p₀

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