A power semiconductor device consists of a region doped with Arsenic atoms such that the concentration of electrons is n0 = 4.9 x 1018 cm-3 and another region doped with Boron atoms such that the concentration of holes is p0 = 3.0 x 1017 cm-3. The device dissipates power which generates heat, thus heating the silicon crystal to a temperature of T = 407 °K. Use: m*n = 1.08 m0, m*p = 0.56 m0, Egap = 1.12 eV = Ec with Ev = 0 as the reference, and m0 is the free electron mass = 9.11 x 10-31 kg. Assume Boltzmann statistics applies and work only on the n-type or the p-type region; no need to work on both. For the region you select, do the following: (a) Find the intrinsic Fermi level EFi 2 pts (b) Find the intrinsic carrier concentration ni = pi 2 pts (c) Find EF - Ev 2 pts (d) Find Ec - EF 2 pts (e) Calculate the respective minority carrier concentrations n0 or p0 2 pts
A power semiconductor device consists of a region doped with Arsenic atoms such that the concentration of electrons is n0 = 4.9 x 1018 cm-3 and another region doped with Boron atoms such that the concentration of holes is p0 = 3.0 x 1017 cm-3. The device dissipates power which generates heat, thus heating the silicon crystal to a temperature of T = 407 °K. Use: m*n = 1.08 m0, m*p = 0.56 m0, Egap = 1.12 eV = Ec with Ev = 0 as the reference, and m0 is the free electron mass = 9.11 x 10-31 kg. Assume Boltzmann statistics applies and work only on the n-type or the p-type region; no need to work on both. For the region you select, do the following:
(a) Find the intrinsic Fermi level EFi 2 pts
(b) Find the intrinsic carrier concentration ni = pi 2 pts
(c) Find EF - Ev 2 pts
(d) Find Ec - EF 2 pts
(e) Calculate the respective minority carrier concentrations n0 or p0 2 pts
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