A particular interconnection between two logicgates in an IC chip runs one-half the distance acrossa 7.5-mm-wide die. The interconnection line is insulated from the substrate by silicon dioxide. If theline is 1.5 m wide and the oxide (εox = 3.9εoand εo = 8.85 × 10−14 F/cm) beneath the line is1 m thick, what is the total capacitance of thisline assuming that the capacitance is three timesthat predicted by the parallel plate capacitance formula? Assume that the silicon beneath the oxiderepresents a conducting ground plane.

Concept: A capacity to do work is called energy and it may exist in potential, kinetic, thermal,…

Answered: A particular interconnection between…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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A particular interconnection between two logic
gates in an I_C chip runs one-half the distance across
a 7.5-mm-wide die. The interconnection line is insulated from the substrate by silicon dioxide. If the
line is 1.5 m wide and the oxide (εox = 3.9ε_o
and ε_o = 8.85 × 10⁻¹⁴F/cm) beneath the line is
1 m thick, what is the total capacitance of this
line assuming that the capacitance is three times
that predicted by the parallel plate capacitance formula? Assume that the silicon beneath the oxide
represents a conducting ground plane.

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