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:- A p-type silicon sample with the rectangular geometry has parameters I 0.1mm, and d = 8 µm. The semiconductor parameters are p = 1016 cm³ cm?/V-s. For Vx = 10 V and B,= 500 gauss = 5 x 102 tesla, determine Ix a

:- A p-type silicon sample with the rectangular geometry has parameters I 0.1mm, and d = 8 µm. The semiconductor parameters are p = 1016 cm³ cm?/V-s. For Vx = 10 V and B,= 500 gauss = 5 x 102 tesla, determine Ix a

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q3:- A p-type silicon sample with the rectangular geometry has parameters L= 2mm, W= 0.1mm, and d = 8 µm. The semiconductor parameters are p = 1016 cm³ and µp= 320 cm?/V-s. For Vx = 10 V and B2= 500 gauss = 5 x 102 tesla, determine Ix and VH . %3D
Transcribed Image Text:Q3:- A p-type silicon sample with the rectangular geometry has parameters L= 2mm, W= 0.1mm, and d = 8 µm. The semiconductor parameters are p = 1016 cm³ and µp= 320 cm?/V-s. For Vx = 10 V and B2= 500 gauss = 5 x 102 tesla, determine Ix and VH . %3D
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