a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Subject: Electronics Engineering Solve no 6
semiconductors
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