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a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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a) For the given silicon semiconductor resistance of radius =1mm and height = 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm3. Assume mobility values of un = 1350 cm?/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K=86x106, mm= 10 m) b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). ) Find the majority and minority carrier concentration values at T=350K. Silicon Np Write final answer below (upload detailed answer): a) l= b) V= c) Majority carriers are.. Majority carriers concentrations [cm-3]= Minority carriers are.. Majority carriers concentrations [cm-3]=
Transcribed Image Text:a) For the given silicon semiconductor resistance of radius =1mm and height = 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm3. Assume mobility values of un = 1350 cm?/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K=86x106, mm= 10 m) b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). ) Find the majority and minority carrier concentration values at T=350K. Silicon Np Write final answer below (upload detailed answer): a) l= b) V= c) Majority carriers are.. Majority carriers concentrations [cm-3]= Minority carriers are.. Majority carriers concentrations [cm-3]=
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