A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fullyionized. It is exposed to light such that electron-hole pairs are generated throughout thevolume of the bar at the rate of 1020 cm³s1. If the recombination lifetime is 100 µs, theintrinsic carrier concentration of silicon is 1010 cm³and assuming 100% ionization of boron,then the approximate product of steady-state electron and hole concentrations due to thislight exposure is10^30 cm^-610^34 cm^-610^23 cm^-610^32cm^-6

Intrinsic semiconductors have very low conductivity at the room temperature. Hence, extra charge…

Answered: A bar of silicon is doped with a boron…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

A certain 4-layer diode is biased in the forward blocking region with an anode to cathode voltage of 20V. Under this bias condition, the anode current is 1 uA. Determine the resistance of the diode in the Forward blocking region
Considering the following expressions for pure germenium and pure silicon: 1. direct band gap semiconductors 2. indirect band gap semiconductors 3. degenerate semiconductors from these expressions: please choose one: a) 1 alone is true b) 2 alone is true c) 3 alone is true d) none of the above
Q6) Consider a silicon sample is doped with 1015/cm³ Arsenic(As),then additionally doped with Boron(B) 1017/cm³.Calculate the total conductivity of the material .What is the type of the net sample Assume: H,= 560 cm²/V-S, µ-950 cm²/V-S, n= 1.5x1010 cm²/V-S,and q=1.6x10-19C. on
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105 cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following: barrier potential ii. i. depletion width at the junction. If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential across the diode is 0.8 V (n=1). 111.
Silicon diode has a saturation current of 0.01*10^-6 at room temperature of 300k. Find the saturation current at 400k. Hole mobility for silicon 0.048m3/v-s, electron mobility of silicon 0.135m3/v-s.
A silicon diode is doped with 10^15 donors on the n- side and 1.5x10^17 acceptors on the p-side. Find The built-in potential 4. The depletion width and maximum electric field at zero bias II
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
Silicon atoms combine in a regular pattern called......... Please choose one: A) semiconductor B) covalent bond C) crystal D) valence trajectory
Where is the Fermi-level of a boron doped Si semiconductor at 77 K, 300 K, and 600 K at full activation of dopants? The Fermi-level shall be related to the intrinsic Fermi-level Ej. (NA = 107 cm3, Eg(Si) = 1.12 ev, m,* = 0.3mo, m,* = 0.5mo.) Sketch the solution.
Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3. Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K
Q7/ Silicon has a conductivity of 5 x 10-4 (N.m)-1 when pure. How many indium atoms/m3 are required so that the conductivity of 200 (N.m)-1 could be achieved in silicon using indium as an impurity? Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m2 0.13 V. Sec

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