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A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s!. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 101º cm³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is 10^30 cm^-6 10^34 cm^-6 10^23 cm^-6 10^32cm^-6 O O

A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s!. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 101º cm³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is 10^30 cm^-6 10^34 cm^-6 10^23 cm^-6 10^32cm^-6 O O

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s1. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is 10^30 cm^-6 10^34 cm^-6 10^23 cm^-6 10^32cm^-6
Transcribed Image Text:A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s1. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is 10^30 cm^-6 10^34 cm^-6 10^23 cm^-6 10^32cm^-6
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