(a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is characterised by a threshold voltage, Vr = 1V. Assume that the parameter, K = 1 mA/V? where the drain-source current in the MOSFET in saturation is given by equation (3.1). K ips (san) =(Ves -V,)² (3.1) 2 Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1 may be written in terms of the input voltage, vin, and the output voltage vo, by equation (3.2): V,R VGS R, + R, R, + R, (3.2) RL Vs R2 D + R1 VO VIN

(a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is characterised by a threshold voltage, Vr = 1V. Assume that the parameter, K = 1 mA/V? where the drain-source current in the MOSFET in saturation is given by equation (3.1). K ips (san) =(Ves -V,)² (3.1) 2 Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1 may be written in terms of the input voltage, vin, and the output voltage vo, by equation (3.2): V,R VGS R, + R, R, + R, (3.2) RL Vs R2 D + R1 VO VIN

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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