(a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is characterised by a threshold voltage, Vr = 1V. Assume that the parameter, K = 1 mA/V? where the drain-source current in the MOSFET in saturation is given by equation (3.1). K ips (san) =(Ves -V,)² (3.1) 2 Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1 may be written in terms of the input voltage, vin, and the output voltage vo, by equation (3.2): V,R VGS R, + R, R, + R, (3.2) RL Vs R2 D + R1 VO VIN
(a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is characterised by a threshold voltage, Vr = 1V. Assume that the parameter, K = 1 mA/V? where the drain-source current in the MOSFET in saturation is given by equation (3.1). K ips (san) =(Ves -V,)² (3.1) 2 Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1 may be written in terms of the input voltage, vin, and the output voltage vo, by equation (3.2): V,R VGS R, + R, R, + R, (3.2) RL Vs R2 D + R1 VO VIN
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Transcribed Image Text:QUESTION 3
This question examines large signal behaviour of transistor circuits
(a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is
characterised by a threshold voltage, Vr = 1V. Assume that the parameter,
K = 1 mA/V? where the drain-source current in the MOSFET in saturation
is given by equation (3.1).
K
ips(sat)
-(Ves – V, )²
2
(3.1)
Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1
may be written in terms of the input voltage, vIN, and the output voltage vo,
by equation (3.2):
VIN R,
v,R,
VGS
+
(3.2)
R, + R, R, + R,
RL
Vs
+
R1
VO
VIN
Figure 3.1
(b) For the circuit shown in Figure 3.1, calculate the minimum possible
value of output voltage, vo when vIN = 5 V assuming that the
MOSFET is maintained in saturation. Assume R, = R2 = 10 kQ, and
RL = 1 kN
(c) For the circuit shown in Figure 3.1, determine the value of the
constant voltage source, Vs, if vo = 4 V when viN = 5 V and all other
circuit parameters are as descirbed in Q3, part (b).
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