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A- An n - type silicon bar 0.1 cm long and 100 um? in cross - sectional area has a majority carrier concentration of 5 x 100/m and the carrier mobility is 0.13m? /V.s at 300 K. What is the resistance of the bar in 2?

A- An n - type silicon bar 0.1 cm long and 100 um? in cross - sectional area has a majority carrier concentration of 5 x 100/m and the carrier mobility is 0.13m? /V.s at 300 K. What is the resistance of the bar in 2?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Question 3 A- An n – type silicon bar 0.1 cm long and 100 µm? in cross – sectional area has a majority carrier concentration of 5 x 1020/m and the carrier mobility is 0.13m2 V.s at 300 K. What is the resistance of the bar in 2? إجابتك B- A silicon sample 'A' is doped with 108 atoms/cm of Boron. Another sample 'B' of identical dimensions is doped with 10 atoms/cm' of phosphorus. The ratio of Electron to hole mobility is 1/3. What is the ratio conductivity of the sample A to B? إجابتك
Transcribed Image Text:Question 3 A- An n – type silicon bar 0.1 cm long and 100 µm? in cross – sectional area has a majority carrier concentration of 5 x 1020/m and the carrier mobility is 0.13m2 V.s at 300 K. What is the resistance of the bar in 2? إجابتك B- A silicon sample 'A' is doped with 108 atoms/cm of Boron. Another sample 'B' of identical dimensions is doped with 10 atoms/cm' of phosphorus. The ratio of Electron to hole mobility is 1/3. What is the ratio conductivity of the sample A to B? إجابتك
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