Question 3A- An n – type silicon bar 0.1 cm long and 100 µm? in cross – sectional area has a majority carrierconcentration of 5 x 1020/m and the carrier mobility is 0.13m2 V.s at 300 K. What is the resistance ofthe bar in 2?إجابتكB- A silicon sample 'A' is doped with 108 atoms/cm of Boron. Another sample 'B' of identicaldimensions is doped with 10 atoms/cm' of phosphorus. The ratio of Electron to hole mobility is 1/3.What is the ratio conductivity of the sample A to B?إجابتك

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Answered: A- An n - type silicon bar 0.1 cm long…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?
For the diodes, use the models shown below; the regular diode model has 0.7V forward bias voltage; the Zener diode model has -3V breakdown voltage. a) Determine the minimum positive value of lin to make D1 conduct curren b) Determine the minimum positive value of lin to make D2 conduct curren c) Sketch Vout versus lin (0 s lin S 10mA). +5V VD VD Iin 1 O Vout Ip R2 1k Ip VD -3V +0.7V R1Ik D VD +0.7V Zener Diode Model Regular Diode Model
) Convert from Binary to Decimal a) 101101011112 (b) 11001100110.110112 I) Using Double Dabble method, convert from Decimal to Binary (a) 1443.7187510 (b)1845.31010
Q3. The maximum drift velocity of electrons carriers in n-type silicon is approximately 107 cm/s. What is the maximum drift current density that can be supported in the n-type silicon with a phosphorous doping of 10¹7/cm³? Assume n-1200cm²/V.s and Hp 400cm²/V.s
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Need correct answer with explanation in 30 minutes.
Q1) a)Explain how doping a pure silicon crystal with donor impurity atoms makes more charge carriers available for conduction.b)Does the above doping result in a p-type or n-type semiconductor? Explain your answer. c) When the diode is forward biased:i) What happens to the barrier potential?ii) What happens to the depletion region?iii) Indicate on your diagram the directions in which the holes and electrons move
Q1/Fill in the following blanks and explain the solution steps in detail for studies that require a mathematical solution 1-The charge carriers in conductors are 2- Approximately in a pure semiconductor, the distance between the Versese plane and the tactile bundle is And the Atorement Package 3- Electron density and hole in a pure semiconductor varies with change 4- The majority of charge carriers in the p-type semiconductor in 5- Fermi level in semiconductor non-negative type approaching from From 6- The current of saturation depends on 7-A wide area arises in the area of depletion because this area is treated as The charge carriers in semiconductors are. According to the equation And the carriers of the n type are The distance between the delivery package While in semi-conductor non-negative type approaches
C and D please
The diode has a forward voltage of 0.7 V. V is a variable DC source, R1 = 11KQ and R2 = 6KQ. in R1 Vin R2 V out If V, is increased from zero, at what value of V, in volts will the diode start to conduct? in
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For a diode connected NMOS, determine the required drain to source voltage (in V) to produce a drain current of 5.87 µA. Assume the following specifications for the NMOS: k = 1.76 µA/V2, WIL = 4, VTH = 0.7 V, LAMBDA = 0 v-1. Express your answer using 3 decimal places.

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A- An n - type silicon bar 0.1 cm long and 100 um? in cross - sectional area has a majority carrier concentration of 5 x 100/m and the carrier mobility is 0.13m? /V.s at 300 K. What is the resistance of the bar in 2?