A 5-µm long slab of p-type silicon of the type of Fig. 1.36b has been doped non-uniformly along the x-axis according to the profile N,(x) = 1014[1 + 10°exp(-x/(1 µm)]/cm³. Sketch N,(x) vs. x, and show that even if not part of any circuit, the slab possesses a nonzero internal electric field E(x). Calculate E(0) and E(5 um).
A 5-µm long slab of p-type silicon of the type of Fig. 1.36b has been doped non-uniformly along the x-axis according to the profile N,(x) = 1014[1 + 10°exp(-x/(1 µm)]/cm³. Sketch N,(x) vs. x, and show that even if not part of any circuit, the slab possesses a nonzero internal electric field E(x). Calculate E(0) and E(5 um).
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![1.31 A 5-um long slab of p-type silicon of the type
of Fig. 1.36b has been doped non-uniformly
along the x-axis according to the profile N,(x)
1014[1 + 10°exp(-x/(1 µm)]/cm³. Sketch N(x)
vs. x, and show that even if not part
of
any
circuit,
the slab possesses a nonzero internal electric field
E(x). Calculate E(0) and E(5 um).
Hint: since the slab is not part of any circuit, in
equilibrium it must have Jdin + Jaim = 0.
= 0.
(drift)
(diff)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F7bc3513b-8f03-48ef-b371-8a0feb49c7bb%2F8152bf13-485a-4f13-8468-9d72afeb01a2%2Fascjwn_processed.jpeg&w=3840&q=75)
Transcribed Image Text:1.31 A 5-um long slab of p-type silicon of the type
of Fig. 1.36b has been doped non-uniformly
along the x-axis according to the profile N,(x)
1014[1 + 10°exp(-x/(1 µm)]/cm³. Sketch N(x)
vs. x, and show that even if not part
of
any
circuit,
the slab possesses a nonzero internal electric field
E(x). Calculate E(0) and E(5 um).
Hint: since the slab is not part of any circuit, in
equilibrium it must have Jdin + Jaim = 0.
= 0.
(drift)
(diff)
Transcribed Image Text:А
p(x)
Jp(diff)
dp(x)/dx
X
(b)
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