9. Use this information to answer Question 9-12: Consider a Schottky contact between gold and n-type GaAs with a cross-sectional area of 10-4 cm?. The work function of gold is Au = 4.8 V and the electron affinity of GaAs and silicon are XGaAs = 4.07 V and Xsi = 4.05 V. Temperature is 300 K for all problems in this quiz. Calculate the current, IGaAs, ēt a forward bias of 0.5 V in unit of A. Answers within 5% error will be considered correct. Enter answer here 10. Now consider a Schottky contact between gold and silicon with the same cross section 10-4 cm?. Calculate the current, Isi, at a forward bias of 0.5 V in unit of A. Answers within 5% eror will be considered correct. Enter answer here 11. Calculate barrier height, PB, for the gold-silicon contact in unit of V. Answers within 5% error will be considered correct. Enter answer here

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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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9. Use this information to answer Question 9-12:
Consider a Schottky contact between gold and n-type GaAs with a cross-sectional area of 10-4 cm?.
The work function of gold is Au = 4.8 V and the electron affinity of GaAs and silicon are XGaAs = 4.07 V and
Xsi = 4.05 V. Temperature is 300 K for all problems in this quiz.
Calculate the current, IGaAs, ēt a forward bias of 0.5 V in unit of A.
Answers within 5% error will be considered correct.
Enter answer here
10. Now consider a Schottky contact between gold and silicon with the same cross section 10-4 cm?. Calculate the
current, Isi, at a forward bias of 0.5 V in unit of A.
Answers within 5% eror will be considered correct.
Enter answer here
11. Calculate barrier height, PB, for the gold-silicon contact in unit of V.
Answers within 5% error will be considered correct.
Enter answer here
Transcribed Image Text:9. Use this information to answer Question 9-12: Consider a Schottky contact between gold and n-type GaAs with a cross-sectional area of 10-4 cm?. The work function of gold is Au = 4.8 V and the electron affinity of GaAs and silicon are XGaAs = 4.07 V and Xsi = 4.05 V. Temperature is 300 K for all problems in this quiz. Calculate the current, IGaAs, ēt a forward bias of 0.5 V in unit of A. Answers within 5% error will be considered correct. Enter answer here 10. Now consider a Schottky contact between gold and silicon with the same cross section 10-4 cm?. Calculate the current, Isi, at a forward bias of 0.5 V in unit of A. Answers within 5% eror will be considered correct. Enter answer here 11. Calculate barrier height, PB, for the gold-silicon contact in unit of V. Answers within 5% error will be considered correct. Enter answer here
12. Identify all parameters that contribute to the difference in current between the two Schottky contacts above. Check
all that apply.
Bandgap energy
Doping density
Effective mass
Electron affinity
Fermi level
Mobility
Transcribed Image Text:12. Identify all parameters that contribute to the difference in current between the two Schottky contacts above. Check all that apply. Bandgap energy Doping density Effective mass Electron affinity Fermi level Mobility
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