9. (a) Design the circuit in Figure P3.42 such that Ipg = 0.25 mA VD=-2 V. The nominal transistor parameters are VTP = -1.2 V, k 35 μA/V², and W/L = 15. Sketch the load line and plot the Q-po (b) Determine the maximum and minimum Q-point values if the tolera of the k', parameter is ±5 percent. +5 V Rs Rp -5 V -O VD

9. (a) Design the circuit in Figure P3.42 such that Ipg = 0.25 mA VD=-2 V. The nominal transistor parameters are VTP = -1.2 V, k 35 μA/V², and W/L = 15. Sketch the load line and plot the Q-po (b) Determine the maximum and minimum Q-point values if the tolera of the k', parameter is ±5 percent. +5 V Rs Rp -5 V -O VD

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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d) In Figure 3.3 shows the circuit diagram of a typical n-channel JFET common source amplifier. If ac input impedance of this amplifier is RGG=1.XY MOhm, VG = 2.XYV, RD=1.5 x Rs and VDD = 15 V. Determine the value of Rs to set the Q-point to VGs = -0.5 V and ID=2.5 mA. What is the value of VDs at the Q-point? Sketch the amplifier's small signal equivalent circuit model. If the JFET transconductance at this bias point (Q-point) is gm=4.XY mS and go=0.1 ms, what is the AC open circuit voltage gain Av and the AC short circuit current gain Ai of this amplifier Vin RG1 Cin HH RG2 -41 VG + VDD RD Rs VD Cout www11 Figure 3.3 Vout Cs ¡out x=1 y=7
4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog eircuits High voltage applications All of these)
In your own words, explain the Channel length modulation effect in MOSFET with a related graph and example circuit. [. a. b. In your own words, explain how MOSFET works as a Switch?
Q3. Calculate the collector currents and VCE voltages of transistors given below. (B=200 VBE=0.6V) Vcc = 12V R4 = 120k T1 T2 R, = 100k R4 = 51k R4 = 3.9k VEE = -12V
11
1) In the context of semiconductors, describe the following:(a) Intrinsic and extrinsic semiconductor. (b) Drift velocity of carriers.(c) Band-gap energy.(d) Frequency of light emitted by an LED.
ASAP
QUESTION 3 This question examines large signal behaviour of transistor circuits (a) Assume that the MOSFET in Figure 3.1 is operating in saturation and is characterised by a threshold voltage, Vr = 1V. Assume that the parameter, K = 1 mA/V? where the drain-source current in the MOSFET in saturation is given by equation (3.1). K ips(sat) -(Ves – V, )² 2 (3.1) Show that the gate-source voltage, vGs, for the circuit shown in Figure 3.1 may be written in terms of the input voltage, vIN, and the output voltage vo, by equation (3.2): VIN R, v,R, VGS + (3.2) R, + R, R, + R, RL Vs + R1 VO VIN Figure 3.1 (b) For the circuit shown in Figure 3.1, calculate the minimum possible value of output voltage, vo when vIN = 5 V assuming that the MOSFET is maintained in saturation. Assume R, = R2 = 10 kQ, and RL = 1 kN (c) For the circuit shown in Figure 3.1, determine the value of the constant voltage source, Vs, if vo = 4 V when viN = 5 V and all other circuit parameters are as descirbed in Q3, part (b).
Q3. Multiple Choice question based of Field Effect Transistor a. The Drain current for JFET with a Pinch off voltage Vp-3volts and Drain Source Saturation Current Idss-6mA is given a bias of VGS=+1 volt is- a) 1.07mA b) 10.7mA
IV. In the circuit with a silicon transistor, as shown in the +Vcc Figure, if Viegic = 3.6 V, Vcc = 10 V, VLED = 2.3 V, RE = 270 2, B = 200, 1. identify the type of transistor in use and label the three terminals in the figure. logic input 2. find the base current. 3. find the collector current. 4. find the collector-emitter voltage. RE
X=7, Y=0.
b. What is the "turn-on" VGs voltage for the N-channel MOSFET transistors?