8. For a humidity percentage X = 80%, determine the values of Eth, Rth IB1, VEL and VCE1. In which regime is the transistor polarized?

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We propose to study the assembly of figure 1
which allows the ignition of a red diode from a
certain percentage of humidity in the air detected
by a sensor. The assembly elements are:
VDD=3V, R₁=1kn2, R₂=1000, R3=27002. Diode D₁:
VSD1 1.2V, RSD1-12 . Transistor T₁: B=100,
VCEsat 0.2V and its base VST1=0.6V, RST1=1k02. The
value of the resistor RH depend on the air
humidity's percentage (noted X) following the
relation RH=30X; where RH is in 2 and X in %. In
all numerical applications, we will suppose that
3+1 B. VDD is referenced to ground.
1. Determine the expressions of the elements of the
equivalent Thevenin generator (indicated on the
figure) according to VDD, R₁, R₂ and RH.
2. Taking into account the operation of the transistor, give the expression of the current flowing
through the resistor R3 as a function of IB1.
R₁
RH
R₂
Capteur
d'humidité
Thevenin
IBI
R
VBEL
LED
rouge
R₁
VDD
T₁
Figure1:
ICI
VCEI
M
VEI
3. Give the expression of the voltage VE1 as a function of IB1. Deduce the expression of VCE1
4. Give the expression of the current IB1 as a function of Eth, Rth B, VSTI, RST1 VDS1 RSD1 and R3.
We are now looking for the percentage of humidity that unlocks the transistor.
5. Among the following 4 propositions, which one is correct?
a. If D₁is blocked then T₁ is saturated
b. If T₁ is passing then D₁ is saturated
c. D₁ becomes passing only if T₁ becomes passing
d. T₁ becomes saturated only if D₁ becomes passing
6. In this case, what will be the particular value of Eth? What is the particular value of RH?
7. Determine the percentage of humidity which enables the transistor (and the diode) to be
turned on.
8. For a humidity percentage X = 80%, determine the values of Eth Rth IB1, VE1₁ and VCE1. In
which regime is the transistor polarized?
Transcribed Image Text:We propose to study the assembly of figure 1 which allows the ignition of a red diode from a certain percentage of humidity in the air detected by a sensor. The assembly elements are: VDD=3V, R₁=1kn2, R₂=1000, R3=27002. Diode D₁: VSD1 1.2V, RSD1-12 . Transistor T₁: B=100, VCEsat 0.2V and its base VST1=0.6V, RST1=1k02. The value of the resistor RH depend on the air humidity's percentage (noted X) following the relation RH=30X; where RH is in 2 and X in %. In all numerical applications, we will suppose that 3+1 B. VDD is referenced to ground. 1. Determine the expressions of the elements of the equivalent Thevenin generator (indicated on the figure) according to VDD, R₁, R₂ and RH. 2. Taking into account the operation of the transistor, give the expression of the current flowing through the resistor R3 as a function of IB1. R₁ RH R₂ Capteur d'humidité Thevenin IBI R VBEL LED rouge R₁ VDD T₁ Figure1: ICI VCEI M VEI 3. Give the expression of the voltage VE1 as a function of IB1. Deduce the expression of VCE1 4. Give the expression of the current IB1 as a function of Eth, Rth B, VSTI, RST1 VDS1 RSD1 and R3. We are now looking for the percentage of humidity that unlocks the transistor. 5. Among the following 4 propositions, which one is correct? a. If D₁is blocked then T₁ is saturated b. If T₁ is passing then D₁ is saturated c. D₁ becomes passing only if T₁ becomes passing d. T₁ becomes saturated only if D₁ becomes passing 6. In this case, what will be the particular value of Eth? What is the particular value of RH? 7. Determine the percentage of humidity which enables the transistor (and the diode) to be turned on. 8. For a humidity percentage X = 80%, determine the values of Eth Rth IB1, VE1₁ and VCE1. In which regime is the transistor polarized?
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