Answer all the items. Thanks! 8. A P-N junction diode hasa. Low forward and high reverse resistanceb. A non-linear V-I characteristicsc. Zero forward current till the forward voltage reaches cut in valued. All of the above9. N-type semiconductors:a. Are negatively chargedb. Are produced when indium is added as impurity to germaniumc. Are produced when phosphorus is added as impurity to silicond. None of the above10. What best describes the circuit?voltagea. Full-wave rectifierb. Half-wave rectifierc. Clipperd. Clamper11. Determine Ip2R10.33kO10 VGea. 29.40 mAb. 30.30 mAс. 14.70 mAd. None of the above12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has theeffect of:a. Reducing the peak output voltage by 0.7Vb. Increasing the peak output voltage by 0.7Vc. Reducing the peak input voltage by 0.7Vd. No effect13. The conduction band is closest to the valence band in:a. Semiconductorsb. Conductorsc. Insulatorsd. The distance is the same for all of the above14. The concentration of minority carriers in a semiconductor depends mainly on:a. The extent of dopingb. Temperaturec. The applied biasd. None of the above

Diode : Diode is a semiconductor device that allows the current flow only in one direction. Diode…

8. A P-N junction diode has a. Low forward and high reverse resistance b. A non-linear V-I characteristics c. Zero forward current till the forward voltage reaches cut in value d. All of the above _ 9. N-type semiconductors: a. Are negatively charged b. Are produced when indium is added as impurity to germanium c. Are produced when phosphorus is added as impurity to silicon d. None of the above 10. What best describes the circuit? a. Full-wave rectifier b. Half-wave rectifier с. Сipper d. Clamper 11. Determine Io2 a. 29.40 mA b. 30.30 mA c. 14.70 mA d. None of the above 12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the effect of: a. Reducing the peak output voltage by 0.7V b. Increasing the peak output voltage by 0.7V c. Reducing the peak input voltage by 0.7N d. No effect 13. The conduction band is closest to the valence band in: a. Semiconductors b. Conductors c. Insulators d. The distance is the same for all of the above 14. The concentration of minority carriers in a semiconductor depends mainly on: a. The extent of doping b. Temperature c. The applied bias d. None of the above