7. A germaniump-n step junction has donor density Np 1015/cm3 on n-side and acceptor density NA = 107/cm3 on p-side. Calculate the potential barrier at the junction if intrinsic carrier density n; = 2.5 x 1013 /cm3. Assume kxT = 0.026V.

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7. A germanium p-n step junction has donor density Np = 1015/ cm3 on n-side and acceptor density
NA = 107/cm3 on p-side. Calculate the potential barrier at the junction if intrinsic carrier density n; =
2.5 x 1013 /cm3. Assume
kxT
= 0.026V.
8. Calculate the built-in potential barrier, Vii for Si, Ge and GaAs pn junctions if they each have the following
dopant concentrations at T = 300 K:
1. Np = 1014, NA =
2. Np = 5 x 1016, NA = 5 x 1016
where intrinsic carrier density of Si n; = 1.5 x 1010 /cm3, intrinsic carrier density of Ge n; = 2.4 x 1013
/cm3, intrinsic carrier density of GaAs n; = 1.8 x 106 /cm3
1017
Transcribed Image Text:7. A germanium p-n step junction has donor density Np = 1015/ cm3 on n-side and acceptor density NA = 107/cm3 on p-side. Calculate the potential barrier at the junction if intrinsic carrier density n; = 2.5 x 1013 /cm3. Assume kxT = 0.026V. 8. Calculate the built-in potential barrier, Vii for Si, Ge and GaAs pn junctions if they each have the following dopant concentrations at T = 300 K: 1. Np = 1014, NA = 2. Np = 5 x 1016, NA = 5 x 1016 where intrinsic carrier density of Si n; = 1.5 x 1010 /cm3, intrinsic carrier density of Ge n; = 2.4 x 1013 /cm3, intrinsic carrier density of GaAs n; = 1.8 x 106 /cm3 1017
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