6. Among the following statements about the Schottky junctions and PN-junctions, which statement is correct? ( ) a) The S..otky junctions are more desired for designing higher breakdown devices compared with PN-junctions b) In PN-junctions, both holes and electrons contribute to the current, while in the Schottky junctions based on N-type semiconductor, only electrons contribute to the current c) In the Schottky junctions based on N-type semiconductor, both the electrons and holes contribute to the electricity d) The switch speed of the device based on PN-junctions is much faster compared with the devices based on Schottky junctions 7. In a solar cell, when the band gap of the semiconductor increase, the short circuit current the open circuit voltage a) Increase, Increase b) Increase, Decrease c) Decrease, Increase d) Decrease, Decrease while

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6. Among the following statements about the Schottky junctions and PN-junctions, which statement is
correct?
)
a) The Scotky junctions are more desired for designing higher breakdown devices compared with
PN-junctions
b) In PN-junctions, both holes and electrons contribute to the current, while in the Schottky junctions
based on N-type semiconductor, only electrons contribute to the current
c) In the Schottky junctions based on N-type semiconductor, both the electrons and holes contribute
to the electricity
d) The switch speed of the device based on PN-junctions is much faster compared with the devices
based on Schottky junctions
7. In a solar cell, when the band gap of the semiconductor increase, the short circuit current
the open circuit voltage
a) Increase, Increase
b) Increase, Decrease
c) Decrease, Increase
d) Decrease, Decrease
while
Transcribed Image Text:6. Among the following statements about the Schottky junctions and PN-junctions, which statement is correct? ) a) The Scotky junctions are more desired for designing higher breakdown devices compared with PN-junctions b) In PN-junctions, both holes and electrons contribute to the current, while in the Schottky junctions based on N-type semiconductor, only electrons contribute to the current c) In the Schottky junctions based on N-type semiconductor, both the electrons and holes contribute to the electricity d) The switch speed of the device based on PN-junctions is much faster compared with the devices based on Schottky junctions 7. In a solar cell, when the band gap of the semiconductor increase, the short circuit current the open circuit voltage a) Increase, Increase b) Increase, Decrease c) Decrease, Increase d) Decrease, Decrease while
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