**Problem Statement:**5.33 An NMOS transistor is fabricated in a 0.18-μm process having \( k'_n = 400 \, \mu A/V^2 \) and \( V'_A = 5 \, V/μm \) of channel length. Given:- \( L = 0.54 \, μm \)- \( W = 5.4 \, μm \)Tasks:1. Find \( V_A \) and \( λ \). 2. Determine the value of \( i_D \) when the device operates with an overdrive voltage of 0.25 V and \( v_{DS} = 1 \, V \).3. Find the value of \( r_o \) at this operating point. 4. Calculate the change in \( i_D \) if \( v_{DS} \) is increased by 0.5 V.

Given transistor is in saturation becuase Vds > overdrive voltage. =1>0.25

5.33 An NMOS transistor is fabricated in a 0.18-µm process having k, = 400 µA/V´ and V = 5 V/µm of channel length. If L = 0.54 um and W %3D 5.4 um, find V and 2. Find the value of i, that results when the device is operated with an overdrive voltage of 0.25 V and ps = 1 V. Also, find the value of r, at this operating point. If v,s is increased by 0.5 V, what is the corresponding change in i,? Ups

5.33 An NMOS transistor is fabricated in a 0.18-µm process having k, = 400 µA/V´ and V = 5 V/µm of channel length. If L = 0.54 um and W %3D 5.4 um, find V and 2. Find the value of i, that results when the device is operated with an overdrive voltage of 0.25 V and ps = 1 V. Also, find the value of r, at this operating point. If v,s is increased by 0.5 V, what is the corresponding change in i,? Ups

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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