5. Consider a homogeneous GaAs semiconductor at T = 300K with Na uniform generation rate of g' = 102º cm-³ s-1. The electric field is zero. = 1016 cm-3 and N1 = 0. A light source is turned on at t = 0 producing a %3D a) Derive the expression for the excess-carrier concentration and excess carrier recombination rate as a function of time. b) If the maximum, steady-state, excess-carrier concentration is to be 1014 cm3, determine the maximum value of the minority carrier lifetime. ст c) Determine the times at which the excess minority carrier concentration will be equal to one-fourth of the steady-state value.
5. Consider a homogeneous GaAs semiconductor at T = 300K with Na uniform generation rate of g' = 102º cm-³ s-1. The electric field is zero. = 1016 cm-3 and N1 = 0. A light source is turned on at t = 0 producing a %3D a) Derive the expression for the excess-carrier concentration and excess carrier recombination rate as a function of time. b) If the maximum, steady-state, excess-carrier concentration is to be 1014 cm3, determine the maximum value of the minority carrier lifetime. ст c) Determine the times at which the excess minority carrier concentration will be equal to one-fourth of the steady-state value.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Transcribed Image Text:5. Consider a homogeneous GaAs semiconductor at T = 300K with Na
uniform generation rate of g' = 102º cm-³ s-1. The electric field is zero.
= 1016 cm-3 and N1 = 0. A light source is turned on at t = 0 producing a
%3D
a) Derive the expression for the excess-carrier concentration and excess carrier recombination rate as a function of time.
b) If the maximum, steady-state, excess-carrier concentration is to be 1014 cm3, determine the maximum value of the minority carrier lifetime.
ст
c) Determine the times at which the excess minority carrier concentration will be equal to one-fourth of the steady-state value.
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