5. (a) A transistor amplifier is shown in Fig. 11. Draw the small-signal equivalent circuit of this amplifier. Make sure you simplify your equivalent circuit as much as possible. Vcc RC₁ RF RC2 C2 RL Vout + Vin C₁ Figure 11: Transistor amplifier. (b) The small-signal equivalent circuit of a common-emitter amplifier is shown in Fig. 12.

5. (a) A transistor amplifier is shown in Fig. 11. Draw the small-signal equivalent circuit of this amplifier. Make sure you simplify your equivalent circuit as much as possible. Vcc RC₁ RF RC2 C2 RL Vout + Vin C₁ Figure 11: Transistor amplifier. (b) The small-signal equivalent circuit of a common-emitter amplifier is shown in Fig. 12.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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2. A single transistor amplifier is shown in the circuit to the right. The input is a 100 kHz sine wave from a very low impedance source, with a 1 mV peak-to-peak amplitude. hfe, the forward current gain of the transistor, is 300. The base reverse leakage current is 1 nA. The ideality factor for the base-emitter diode is 2, so nkT= 50 mV. a. What are the voltages relative to ground and the currents flowing into, into, and out from the collector, the base, and the emitter, respectively? b. What is the impedance of the 1 µF capacitors at 100 kHz and what effect will this have on the gain of the amplifier? c. What is the gain of the amplifier and how does it depend on the hfe of the transistor? Luff Vin maits Ik { +V₁ = +15V املا Vo Sik Y 1 Fb V₂ I m Vout MF 2K = 250 hfő - -15V --Y₂
Discussion 1. Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. Table-1: Measured Quantities for the DC Bias Circuit Parameter B VB VE Vc Icọ VCEQ VBEQ Te Value 65.63 1.20 0.58 7.32 1418mA 6.74 0,62 18.3356 ECTR Vcc +12V R5 R3 3.3kQ всз37 R2 R4 4.7kQ 4700 Figure 5: The DC Bias Circuit of the Common Emitter Amplifier
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
THE PAIR of transistors Q1 and Q2 in the figure have gains β1 = 200 and β2 = 75 respectively. Determine the value of the equivalent gain βeq for the equivalent transistor Qeq. ( NEED ONLY HANDWRITTEN SOLUTION PLEASE OTHERWISE DOWNVOTE).
........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration
Which of the following is the basic feature of the emitter-connected amplifier circuit? I. It has voltage gain II. It has current gain III. There is a 180 degree phase difference between the input signal and the output signal
Problem 2: The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. a. b. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. What is the largest value of v; that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. Vi V BIAS +1 10K +10 V 1K Vo
5. The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. (a) Find the collector current, lc, and voltage VCE, if ß of transistor is 60. (b) (b) Find Ic and VCE if B changes to 80. +Vcc (9V) 60k 0.5k + VCE VBE
Exersice 4: For the Darlington amplifier circuit used in an emitter-follower configuration appears in figure below: 1. Determine the dc levels of V81, Vci, Ve2, VcB1, and VCE2. 2. Find the currents Ig1, I82, and le2. 3. Calculate Z, and Zo. 4. Determine the voltage gain Ay = V/V¡ and current gain A, = lo/ li. 5. Repeat parts 1 to 4 with a load resistor of 1.2 kN. 6. Evaluate Avs = Vo/Vs if the source has an internal resistance of 1.2 kN and the applied load is 10 kN. +16 V 2.4 MQ 0.1 uF B- 50, B2 = 120 VBE, - VBE, - 0.7 V Q2 10 uF 510Ω
1. Assume that the source voltage for the D-MOSFET in the following figure is measured and found to be 1.6 V. a. Compute lo and Vos- b. If gm = 2000 umho, what is the voltage gain? c. Compute the input resistance of the amplifier. d. Is the D-MOSFET operating in the depletion or the enhancement mode? 100 my pp 1.0 kHz HI C₁ 0.1 µF R₁ 5.1 ΜΩ R₂ 10 ΜΩ +VDD +24 V ① RD 2.7 C3 Rs 330 Ω OV ORI C₂ 33 μF
XY=54
Consider the amplifier shown. Assume that VoQ = 8V and that the transistor is described as follows: B = 150 VA = 300V VT = .025V Determine the small signal parameters for the transistor. Show your work! Vin 12V WWW 10K 2K 12V HH WWW 200uA C2 1K 12V 20K C1 Vo