4.13 Photodiode in photoconductive mode. A photodiode is connected in reverse mode with a small reverse voltage to ensure low reverse current. The leakage current is 40 nA and the sensor operates at 20°C. The junction has an area of 500 um? and operates from a 3 V source, as shown in Figure 4.31. The resistor is 240 S2. Calculate the voltage across R in the dark and when illuminated with a red laser beam (800 nm) with power density of 5 mW/cm². Assume a quantum efficiency of 50%.
4.13 Photodiode in photoconductive mode. A photodiode is connected in reverse mode with a small reverse voltage to ensure low reverse current. The leakage current is 40 nA and the sensor operates at 20°C. The junction has an area of 500 um? and operates from a 3 V source, as shown in Figure 4.31. The resistor is 240 S2. Calculate the voltage across R in the dark and when illuminated with a red laser beam (800 nm) with power density of 5 mW/cm². Assume a quantum efficiency of 50%.
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4.13 Photodiode in photoconductive mode. A photodiode is connected in reverse mode with a small reverse voltage to ensure low reverse current. The leakage current is 40 nA and the sensor operates at 20°C. The junction has an area of 500 um? and operates from a 3 V source, as shown in Figure 4.31. The resistor is 240 S2. Calculate the voltage across R in the dark and when illuminated with a red laser beam (800 nm) with power density of 5 mW/cm². Assume a quantum efficiency of 50%.
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