4.12 Determine the transfer function, 0(s)/X(s), for a tubular heat exchanger similar to the one shown in Figure 2.3 and described by the following differential equation. d²0 do 25- +26+0= 125x dt dt where x = valve position, in. = temperature of the fluid leaving the heat ex- changer, °C

4.12 Determine the transfer function, 0(s)/X(s), for a tubular heat exchanger similar to the one shown in Figure 2.3 and described by the following differential equation. d²0 do 25- +26+0= 125x dt dt where x = valve position, in. = temperature of the fluid leaving the heat ex- changer, °C

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

4-) In the half-wave rectifier in Figure 4 diode D is ideal. The input v, is a 50-Hz sinusoidal voltage with peak value V, (v,(1) =V, sin(ot) V ). The rectifier feeds a load which draws constant current /, from the rectifier. (a) Derive an expression for the ripple voltage V, in terms of I,, Cand V, (Hint: After the diode turns off att, the capacitor discharges with a constant discharging current i, = -I. Also the discharging time (from t, to t, +T) can be approximated by the period of the sine wave T = Express dv / dt in terms of V, ) (b) With I, =0.1A, C = 200 uF, V, = 100 V calculate V,.( (c) Calculate the conduction angle of the diode oAt.(: (Hint: It may help to review the derivation of wAt for the resistance load case) - Vc V, Figure 4 4+T
...fast and very fast..in 4 minute..
QUESTIONS Define resistance of a mateial. Write the unit of resistance. A summary of the experience
1)Define Drift and Diffusion current in Semiconductor. 2. Why n - type impurities are called as Donor impurities? 3. Give the other names of depletion region? (At least Two) 4. General Purpose Diodes are mostly preferred in chopper circuits. Is it True? Justify.
Q5/B: A three units string insulator is fitted with guard ring around the button insulator. The capacitances of the link pins capacitance. Find the voltage distribution across each unit of string and string efficiency.
(a) Suppose the excess carriers is uniform, what changes does it make to the 'Ambipolar transport equation' for a n-type semiconductor. Explain the equations.
Q5. For the following center tapped transformer, show the wave form across each half of the secondary winding and across R1, when a 100 V peak sine wave is applied to the primarywinding. What is the PIV rating must the diode have? (Use constant voltage drop model for the Silicon diode) IN4001 R 10 ΚΩ I14001 Q6. Can we operate normal PN junction diode in breakdown region for longer duration? Give reason Q7. What is the specialty of Zener diode so as we can operate it in breakdown region for longer duration? Q8. What is the difference between Zener breakdown and Avalanche breakdown? Q9. Draw Zener regulator circuit to obtain regulated DC voltage 6.8 V. Considering input DC voltage in the range from 10V to 30V. Consider load resistance of 10KS. Q10. Determine maximum and minimum value of Zener current if value of series resistance is 1 K, load resistance is 2KN and input varies from 10V to 30V. Zener voltage is 5 V. Q11. What is LED? Q12. Which materials are used in manufacturing of LEDS?…
A. Define Commutation. List the method of commutation and explain the external plus commutation method in details. B. Find an expression for output dc voltage in single phase fully controlled thyristor rectifier taking the effect of source inductance into consideration.
Q?: Fill in the following blanks with suitable words : 1. Conductivity of a material depends on: and 2. _can break the bonds in semiconductor crystals and create free electrons. 3. Mobility and Sheet resistance in semiconductor are measured by 4. Name of the force which bend electron trajectories in magnetic field At room temperature, the current in an intrinsic semiconductor is due to is unevenly doped 7. During reverse bias of the diode there is a small current of the order of micro 6 Each semiconductor material in a ampere due to
Q2: A Cockcroft-Walton type voltage multiplier has ten stages with capacitances, all equal to 1.5 µF. The supply transformer secondary voltage is 800 kV at a frequency of 50 Hz. If the load current to be supplied is 8 mA, find (a) the percentage ripple, (b) the regulation, and (c) the optimum number of stages for minimum regulation or voltage drop.
2
You have developed an idea for using a poly Si surface‐ micromachined cantilever. Initially, you designed a process flow for creating this simple structure, and the process flow is detailed in the figure below. ( cross section view and top view)There are several critical errors with this process (things that won’t work or won’t produce the result). Please find the critical errors in this process flow and, where possible, suggest alternate approaches. Do not worry about the accumulation of errors, but rather treat each step assuming that the structure up to that step could be created.This structure is actually quite simple to make. Develop a simpler process flow and associated masks to create the final structure. Be sure to show cross‐sectional and planar views of all key steps in the process.