4. (P5.34) An NMOS transistor is fabricated in a 0.5-μm process having kn 200 μA/V² and V₁ = 20V/μm of channel length. If the L= 1.5μm and W = 15μm, find VA and λ. Find the value of ID that results when the device is operated with an overdrive voltage of 0.5V and VDS = 2V. Also, find the value of ro at this operating point. If VDs is increased by 1V, what is the corresponding change in ID?
4. (P5.34) An NMOS transistor is fabricated in a 0.5-μm process having kn 200 μA/V² and V₁ = 20V/μm of channel length. If the L= 1.5μm and W = 15μm, find VA and λ. Find the value of ID that results when the device is operated with an overdrive voltage of 0.5V and VDS = 2V. Also, find the value of ro at this operating point. If VDs is increased by 1V, what is the corresponding change in ID?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Question
![4. (P5.34) An NMOS transistor is fabricated in a 0.5-μm process
having kn 200 μA/V² and V₁ = 20V/μm of channel length. If the
L= 1.5μm and W = 15μm, find VA and λ. Find the value of ID that
results when the device is operated with an overdrive voltage of
0.5V and VDS = 2V. Also, find the value of ro at this operating
point. If VDs is increased by 1V, what is the corresponding change
in ID?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F4fb02365-efda-4f71-9185-5332218a7cc4%2F11bb0e81-0bb9-4003-aec8-a0cd8b1adb69%2F5j6s2vj_processed.png&w=3840&q=75)
Transcribed Image Text:4. (P5.34) An NMOS transistor is fabricated in a 0.5-μm process
having kn 200 μA/V² and V₁ = 20V/μm of channel length. If the
L= 1.5μm and W = 15μm, find VA and λ. Find the value of ID that
results when the device is operated with an overdrive voltage of
0.5V and VDS = 2V. Also, find the value of ro at this operating
point. If VDs is increased by 1V, what is the corresponding change
in ID?
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