4- For an AWGN channel, if SNR (signal to noise ratio) =14 and bandwidth -20kHz, then the channel capacity ---- bps 5- The efficiency of BSC (Binary Symmetric Channel) is 70 %, then the redundancy of the channel is---

4- For an AWGN channel, if SNR (signal to noise ratio) =14 and bandwidth -20kHz, then the channel capacity ---- bps 5- The efficiency of BSC (Binary Symmetric Channel) is 70 %, then the redundancy of the channel is---

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Q: Determine the bandwidth efficiency on the following modulators: (a) QPSK, fb= 10Mbps. (b) 8-PSK, fb=…

Q: Sketch the transfer curve for an n-channel depletion type MOSFET with IDSS=14 mA and Vp = -5 V

Q: so VC, Vm and modulation in DV and 75% and 50%

Q: The Ebers-Moll model was one of the first mathematical models used to describe the characteristicsof…

A: Given data: The transistor saturation current is: Is The collector current is: IC The base current…

Q: In PM, the modulation index is a. inversely proportional to Em b. proportional to fm c.…

A: The modulation index of the modulation system describes how the modified signal of a network company…

Q: Electronics question What is Immediate and concurrent assertion. What is metastable state.

A: The property of design is given by assertion. The assertion check whether simulation behave same way…

Q: Describe briefly about VHDL and its capabilities

A: VHDL is one of the most widely used Hardware Description Languages (HDL) for digital circuit design.…

Q: Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator…

A: MOSFET (Metal oxide Semiconductor Field Effect Transistor ) is Field effect transistor having 4…

Q: B-frames provide obvious coding advantages, such as increase in SNR at low bitrates and bandwidth…

A: B-frames: These are a type of partial frame in compressed video that is generated by referencing…

Q: Draw a Ic - VCE characteristic reference curve covering all regions of operation for a NPN bipolar…

A: Given and to find: Draw an Ic - VCE characteristic reference curve covering all regions of operation…

Q: b) Consider a MOSFET circuit with transistor parameters VT=0.8v, Kv=0.85 mAV and A=0.02V. i)…

A: We will do DC analysis to find out resistance and small signal parameters .

Q: In the current mirror shown controlled by the current source lIN, for identical transistors, then…

Q: IV- The datasheet for a certain D-MOSFET gives Vp= 5V and Ipss=8mA (a) Is this device p channel or n…

A: Given: The datasheet for a certain D-MOSFET gives: VP=5 VIDSS=8 mA To find: (a) Is this device p…

Q: Q11: A signal f,() is bond - limited to 3.6 KHz, and three other signals fi(t), f2(t), f3(t) and…

A: A message signal is transferred from the sender to the receiver end. The signal is transmitted…

Q: For the fixed-bias configuration a. Sketch the transfer characteristics of the device. b.…

A: The required parameters can be calculated by using the DC analysis of JFET amplifier circuit.

Q: A modulated signal with a bandwidth equal to 11.1 KHz. The LSB of the modulated signal is 9.6 KHz…

Q: Consider an AWGN channel with 4-kHz bandwidth and signal to noise ratio1.25 x 10*. Calculate the…

Q: Explain the relationship between Ip and Vps of MOSFET.

A: The relationship between ID and VDS of MOSFET is called output transfer characteristics.

Q: 2. For the SSBSC modulator shown below: (A=5, B=0.2, C=0.01) a) identify the method of single…

A: Given:we need to do:a) identify the SSB-SC generation. b) Find the equation at the output of BM1,…

Q: For the fixed-bias configuration a. Sketch the transfer characteristics of the device. b.…

A: The required parameters can be calculated by using DC analysis of the amplifier circuit

Q: (a) Complete the following tables to find VTC. Use the baseline model for Qn and Qp (I =0)

A: Given circuit, Given data, Vtn=Vtp=0.4 VKn=0.3 A/V2Kp=1.5 mA/V2VDD=1.8 V

Q: Sketch the transfer characteristics of a p-channel enhancement-type MOSFET if VT= -5 V and k = 0.45…

A: Given VT = -5 V k = 0.45 x 10-3 A/V2

Q: sketch the transfer and drain characteristics of an n-channel enhancement type MOSFET if VT=3.5V and…

A: MOSFET (Metal oxide Semiconductor Field Effect Transistor ) is Field effect transistor having 4…

Q: what are the advantages and disadvantagesof large carrier and suppressed carrier modulation?

A: Advantage of large carrier modulation: The advantage of large carrier signal modulation is that it…

Q: b) Plot Id vs Vds through a minimum size n-type transistor for a range of Vds from 0V through power…

A: Solution- Given, supply voltage = 1.2 V For Vgs = 0.6V, 0.9V, 1.2V

Q: 1. A 400 w carrier is modulated by SSB, calculate total power

A: Hello since you have posted multiple questions and not specified which question to solve. We will…

Q: (a) Figure Q.la shows the connections of all subsystem in one complete system. (i) Draw signTM" &…

Q: EX A.2 Sketch the transfer curve for a p - channel device with Ipss = 6 mA and Vp = 3 V.

A: Given, P-channel device having IDSS =6 mA VP = 3 V

Q: Sketch the transfer curve for an n-channe depletion type MOSFET with IDSS=10 mA and Vp = -8 V

Q: A modulated signal with a bandwidth equal to 6.6 KHz. The LSB of the modulated signal is 3.4 KHz and…

Q: Derive an expression of channel capacity for a binary symmetric channel (BSC) whose channel matrix…

Q: B-Draw the modulation and demodulation block diagram of AM-VSB. C- If m(t)-Am cos(wt) v, find and…

Q: [01] Consider a baseband signal whose voltage varies over the range -16V to 4V. This signal is…

Q: a) Differentiate between FDM and TDM b) Assuming the channel BW of 250kHz. Find the number of…

A: Given: a) Differentiate between FDM and TDM b) Assuming the channel BW of 250kHz. Find the number of…

Q: What will be the capacity of binary symmetric channel with crossover probability of 0.5?

A: The channel capacity (C) for a binary symmetric channel can be expressed by the following formula:…

Q: Explain Nyquist Theorem and Shannon capacity. What is the significance?

A: Nyquist theorem : It states that continuous form of a time variant signal can be represented in the…

Q: Question 3 A radio transceiver is being designed for 16-QAM signals, using time-division duplex at…

A: In radio communication, a transceiver is an electronic device that combines a radio transmitter and…

Q: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse…

A: Since you have posted a question with multiple sub-parts, we will solve the first three sub-parts…

Q: 16) each digital input to a non-inv. D/A will see an equivalent resistance of: R. 2R none of the…

A: 16) For a non-inverting amplifier, if the value of input resistance and the feedback resistance is…

Q: MOSFET is operated only in ohmic and active regions. Select one:

Question

-:Q3
Q3: fill the blank
1- The first row of A TSC (Ternary Symmetric Channel) is [0.8 0.1 0.2], then the
third row of this channel is --
2- A BSC (Binary Symmetric Channel) with probability of error =0.4, then p(x2/y1)
3- A binary symmetric channel with error probability of 0.1 and marginal entropy
P(yl) = 0.7, P(y2) =0.3. Find the efficiency
4- For an AWGN channel, if SNR (signal to noise ratio) =14 and bandwidth
-20kHz, then the channel capacity ---bps
5- The efficiency of BSC (Binary Symmetric Channel) is 70 %, then the
redundancy of the channel is---
6- The efficiency of BSC can be calculated as---
7- write the channel of TSC (Ternary Symmetric Channel) with Px1=0.5 , px2=0.1
px3=0.2 .
8- find the capacity if marginal entropy-0.57 with A binary symmetrie channel
with error probability of 0.7.
ث إضافة ملف

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

What are the values of Aυ, Rin, Rout, and Ai for the common-collector stage shown if RI = 10 kΩ, RB = 56 kΩ, RL = 1.2 kΩ, βo = 80, and gm = 0.5 S? (Ai = io/ii ). What is the small-signal limit for the value of υi in this circuit?
b. Using the shorthand method, sketch the transfer curve for a p-channel device (Ip in x-axis, VGs in y-axis) with Ipss = 4 mA and Vp = 3V.
I want presentation about mosfet / Jft
a. Sketch the transfer curve for the device in the figure below. b. Determine IDg and VGSQ using the transfer curve c. Calculate Ipo and VGSQ for the circuit below 12 V 1.2 ka loss = 12 mA Vaso V =-4V 1 MA 1.5 V.
answer all
Q2. Distinguish coherent Vs non coherent detection in digital modulation technique Q4. Discuss FSK and QAM techniques. Draw the signal constellation diagram of 4FSK and 4QAM
Q.3: A binary symmetric channel with probability of error 0.1. Draw the channel model and find channel capacity
Figure 1 shows the transfer curve of a network with an unknown channel Junction Field Effect Transistor (JFET). (i) Identify the channel of the JFET; justify your answer. (ii) Given the supply voltage of 16 ?, design a voltage divider network using the JFET in (i) above. Take ?1 = 1400??; ?2 = 180??; and ?? = 10 ?. Please use the nearest standard resistor values. (iii) With the obtained standard resistance values in (ii) above, determine the new ??? and ????, using the mathematical approach only.
When the JFET is cutoff, this mean that: Select one: a. The channel is completely closed by the depletion region b. The channel isr everse-biased C. The channel is extremely narrow d. The channel is at its widest point
i need the answer quickly
D. Use the small signal circuit to find the expression for Vo/Vin. Consider the Body Effect of Mi but, neglect the channel length modulation. Voo WWD M₁ V₂
7