[30 P] A silicon wafer is doped with 1015 cm-3 donor atoms. Assume ligh generates density of electrons and holes equal to 1018 cm 3. Calculate the tota electron and hole concentrations and location of the quasi-Fermi levels for the electrons and holes with respect to the intrinsic Fermi level. (n = 1x1010 cm N. = 2.8x1019 cm-3, Ny = 1.04x1019 cm3, T = 300K). %3D %3D
[30 P] A silicon wafer is doped with 1015 cm-3 donor atoms. Assume ligh generates density of electrons and holes equal to 1018 cm 3. Calculate the tota electron and hole concentrations and location of the quasi-Fermi levels for the electrons and holes with respect to the intrinsic Fermi level. (n = 1x1010 cm N. = 2.8x1019 cm-3, Ny = 1.04x1019 cm3, T = 300K). %3D %3D
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![[30 P] A silicon wafer is doped with 1015 cm-3 donor atoms. Assume light
generates density of electrons and holes equal to 1018 cm-3. Calculate the total
electron and hole concentrations and location of the quasi-Fermi levels for the
electrons and holes with respect to the intrinsic Fermi level. (n = 1x1010 cm-3,
Ne = 2.8x1019 cm-3, Ny = 1.04x1019 cm3, T = 300K).
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Transcribed Image Text:[30 P] A silicon wafer is doped with 1015 cm-3 donor atoms. Assume light
generates density of electrons and holes equal to 1018 cm-3. Calculate the total
electron and hole concentrations and location of the quasi-Fermi levels for the
electrons and holes with respect to the intrinsic Fermi level. (n = 1x1010 cm-3,
Ne = 2.8x1019 cm-3, Ny = 1.04x1019 cm3, T = 300K).
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