3.2Vis applied ncross a lum picce of n-type silicon device. The doping concentration is Np107 cmO If the transit time for an electron is 4ps. Calculate the average drift velocity of an clectron inthe device(i) What is the electron mobility?(iii) Calculate the electron diffusion coefficient- (iv) Determine the diffusion current at the midpoint of the bar(v) Determine the drift current

Given V = 2V ND =1017 cm-3 Transit time t = 4pS

3.2Vis applied across a lum piece of n-type silicon device. The doping concentration is ND 107 cm O If the transit time for an electron is 4ps. Calculate the average drift velocity of an electron in the device (i) What is the electron mobility? (iii) Calculate the electron diffusion coefficient

3.2Vis applied across a lum piece of n-type silicon device. The doping concentration is ND 107 cm O If the transit time for an electron is 4ps. Calculate the average drift velocity of an electron in the device (i) What is the electron mobility? (iii) Calculate the electron diffusion coefficient

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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3.2Vis applied ncross a lum picce of n-type silicon device. The doping concentration is Np
107 cm
O If the transit time for an electron is 4ps. Calculate the average drift velocity of an clectron in
the device
(i) What is the electron mobility?
(iii) Calculate the electron diffusion coefficient
- (iv) Determine the diffusion current at the midpoint of the bar
(v) Determine the drift current

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