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3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016 cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K under equilibrium? a) ~ 360 mV b) - 720 mV - 1380 mV - 230 mV ~ 460 mV P x=-Wp x=0 N 2-60

3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016 cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K under equilibrium? a) ~ 360 mV b) - 720 mV - 1380 mV - 230 mV ~ 460 mV P x=-Wp x=0 N 2-60

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016 cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K under equilibrium? a) ~ 360 mV b) - 720 mV - 1380 mV - 230 mV ~ 460 mV P x=-Wp x=0 N 2-60
Transcribed Image Text:3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016 cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K under equilibrium? a) ~ 360 mV b) - 720 mV - 1380 mV - 230 mV ~ 460 mV P x=-Wp x=0 N 2-60
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