3) The work functions of gallium antimonide (GaSb), gallium phosphide (GaP) and gallium nitride (GaN) semiconductors 0.73, 2.24 and 3.4 eV, respectively are (https://www.rp-photonics.com/band gap.html). Calculate: a) the threshold frequencies v. for the gallium antimonide, gallium phosphide and gallium nitride semiconductors. b) the longest wavelength of the electromagnetic radiation that can eject electron from the gallium antimonide, gallium phosphide and gallium nitride. c) If it is planned to use them in visible light, which of them is selected? Why? d) If you plan to use the semiconductor as photocatalyst at 450 nm in visible region, is it possible to eject electron from the appropriate semiconductor?

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3) The work functions of gallium antimonide (GaSb), gallium phosphide (GaP) and gallium
nitride
(https://www.rp-photonics.com/band gap.html). Calculate:
|(GaN)
semiconductors
0.73,
2.24
and
3.4 eV,
respectively
are
a) the threshold frequencies vo for the gallium antimonide, gallium phosphide and gallium
nitride semiconductors.
b) the longest wavelength of the electromagnetic radiation that can eject electron from the
gallium antimonide, gallium phosphide and gallium nitride.
c) If it is planned to use them in visible light, which of them is selected? Why?
d) If you plan to use the semiconductor as photocatalyst at 450 nm in visible region, is it
possible to eject electron from the appropriate semiconductor?
Transcribed Image Text:3) The work functions of gallium antimonide (GaSb), gallium phosphide (GaP) and gallium nitride (https://www.rp-photonics.com/band gap.html). Calculate: |(GaN) semiconductors 0.73, 2.24 and 3.4 eV, respectively are a) the threshold frequencies vo for the gallium antimonide, gallium phosphide and gallium nitride semiconductors. b) the longest wavelength of the electromagnetic radiation that can eject electron from the gallium antimonide, gallium phosphide and gallium nitride. c) If it is planned to use them in visible light, which of them is selected? Why? d) If you plan to use the semiconductor as photocatalyst at 450 nm in visible region, is it possible to eject electron from the appropriate semiconductor?
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