-3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s. .S. Boltzmann Constant=1.38×1023 J/K = 8.62x10s eV/K Unit charge= 1.602 x10*C Planck's constant= 6.626×10 4 J.sec-D4.136×10 1 eV.sec -34

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Germanium doped with 104 m Al atoms is a semi-conductor at room temperature and
each Al atom creates a charge carrier.
a) Is the material obtained a p-type or an n-type semiconductor?
b) Calculate the electrical conductivity of this material at room temperature, considering
that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.
Boltzmann Constant=1.38×102³ J/K = 8.62×10³ eV/K
Unit charge= 1.602 ×10 C
Planck's constant= 6.626×10 ª J.sec=4.136×10 eV.sec
-34
-15
Transcribed Image Text:-3 Germanium doped with 104 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s. Boltzmann Constant=1.38×102³ J/K = 8.62×10³ eV/K Unit charge= 1.602 ×10 C Planck's constant= 6.626×10 ª J.sec=4.136×10 eV.sec -34 -15
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