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-3 Consider a gallium arsenide pn junction at T = 300 K with doping concentrations of Na = 5 X 10¹5 cm-³ and Nd = 6 X 10¹6 cm ³. Calculate the built-in potential barrier. A) Vbi = 0.342 eV B) Vbi 1.191 eV C) Vbi = 1.157 eV D) Vbi = 0.723 eV E) Vbi = 0.689 eV F) Vbi = 0.307 eV

-3 Consider a gallium arsenide pn junction at T = 300 K with doping concentrations of Na = 5 X 10¹5 cm-³ and Nd = 6 X 10¹6 cm ³. Calculate the built-in potential barrier. A) Vbi = 0.342 eV B) Vbi 1.191 eV C) Vbi = 1.157 eV D) Vbi = 0.723 eV E) Vbi = 0.689 eV F) Vbi = 0.307 eV

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Consider a gallium arsenide pn junction at T = 300 K with doping concentrations of Na = 5 X 10¹5 cm-³ and Nd = 6 X 10¹6 cm ³. Calculate the built-in potential barrier. A) Vbi = : 0.342 eV B) Vbi = 1.191 eV C) Vbi = : 1.157 eV D) Vbi = 0.723 eV E) Vbi = 0.689 eV F) Vbi = 0.307 eV
Transcribed Image Text:Consider a gallium arsenide pn junction at T = 300 K with doping concentrations of Na = 5 X 10¹5 cm-³ and Nd = 6 X 10¹6 cm ³. Calculate the built-in potential barrier. A) Vbi = : 0.342 eV B) Vbi = 1.191 eV C) Vbi = : 1.157 eV D) Vbi = 0.723 eV E) Vbi = 0.689 eV F) Vbi = 0.307 eV
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