+15 V 5.1 kfl R 150 k I F RI k 330 n HE 15 k 51 1 R S1 Kn R$15 kn =33 µF Figure 10.8.1 For the amplifier circuit in Fig. 10.8.1, assume that the BJT has VBE = 0.7 V and ß = 100 and neglect the Early effect. Find the input resistance Rin-

+15 V 5.1 kfl R 150 k I F RI k 330 n HE 15 k 51 1 R S1 Kn R$15 kn =33 µF Figure 10.8.1 For the amplifier circuit in Fig. 10.8.1, assume that the BJT has VBE = 0.7 V and ß = 100 and neglect the Early effect. Find the input resistance Rin-

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

Question

+15 V
5.1 kf
Re
Re
150 k
I uF
ov,
R=I k2
330 nF
Cei
Ra
15 kfl
R.
51 1
Rm 51 k
1.5 k
33 uF
R.
Figure 10.8.1
For the amplifier circuit in Fig. 10.8.1, assume that the BJT has VBE = 0.7 V and B =
100 and neglect the Early effect.
Find the input resistance Rin.
ww

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