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= 12.) (Neamen: Problem 7.22) - Consider a GaAs pn junction at T 300K. The junction capacitance at zero bias is C(0), and the junction capacitance with a 10 V reverse bias is C(10 V). The ratio of the capacitances is C(0)/C(10V) = 3.13. Only 20% of the depletion region lies in the p side of the junction. Determine (a) The built-in potential (b) The doping concentrations Na and Na.

= 12.) (Neamen: Problem 7.22) - Consider a GaAs pn junction at T 300K. The junction capacitance at zero bias is C(0), and the junction capacitance with a 10 V reverse bias is C(10 V). The ratio of the capacitances is C(0)/C(10V) = 3.13. Only 20% of the depletion region lies in the p side of the junction. Determine (a) The built-in potential (b) The doping concentrations Na and Na.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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12.) (Neamen: Problem 7.22) - Consider a GaAs pn junction at T = 300K. The junction capacitance at zero bias is C(0), and the junction capacitance with a 10 V reverse bias is C(10V). The ratio of the capacitances is C(0)/C(10V) = 3.13. Only 20% of the depletion region lies in the p side of the junction. Determine (a) The built-in potential (b) The doping concentrations N₁ and Na.
Transcribed Image Text:12.) (Neamen: Problem 7.22) - Consider a GaAs pn junction at T = 300K. The junction capacitance at zero bias is C(0), and the junction capacitance with a 10 V reverse bias is C(10V). The ratio of the capacitances is C(0)/C(10V) = 3.13. Only 20% of the depletion region lies in the p side of the junction. Determine (a) The built-in potential (b) The doping concentrations N₁ and Na.
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