10-The voltage gain of a D-MOSFET amplifier is dependent on a-Rp b-RL c-gm d-All of the above 11-CMOS stands for a-Common MOs b-Complementary MOS e-p-channel and n-channel devices d-Active-load switching. 12-When the internal temperature increases in a power FET,the a-Gate current decrease b-Threshold voltage increase e-Drain current decrease d-Saturation current increase

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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10-The voltage gain of a D-MOSFET amplifier is dependent on
a-Rp
b-RL
c-gm
d-All of the above
11-CMOS stands for
a-Common MOs
b-Complementary MOS
e-p-channel and n-channel devices
d-Active-load switching.
12-When the internal temperature increases in a power FET,the
a-Gate current decrease
b-Threshold voltage increase
e-Drain current decrease
d-Saturation current increase
Transcribed Image Text:10-The voltage gain of a D-MOSFET amplifier is dependent on a-Rp b-RL c-gm d-All of the above 11-CMOS stands for a-Common MOs b-Complementary MOS e-p-channel and n-channel devices d-Active-load switching. 12-When the internal temperature increases in a power FET,the a-Gate current decrease b-Threshold voltage increase e-Drain current decrease d-Saturation current increase
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