1. When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 350 mV, working in saturation is 800 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, what is the drain current for an applied VGS of 1400 mV?
1. When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 350 mV, working in saturation is 800 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, what is the drain current for an applied VGS of 1400 mV?
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Transcribed Image Text:1. When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of
350 mV, working in saturation is 800 mV, the drain current is observed to be 1
mA. Neglecting the channel width modulation effect and assuming that the
MOSFET is operating at saturation, what is the drain current for an applied VGS
of 1400 mV?
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