1. Find the width of PMOS transistors for symmetric CMOS Inverse? 2. Determine the total propagation time? 3. Determine the total current at input voltage = 3volt? 4. Explain trade-off and benefit of (fabrication and fan-out)? 5. Find the VTC of first and last inverters? se VDD= 6 V, VT.N= 1 V. Vp-1, KP 16 A/V 2 and KN = 40 u A/V^2. OX 696 a F/um 2 and CL = 1.5 pF?

1. Find the width of PMOS transistors for symmetric CMOS Inverse? 2. Determine the total propagation time? 3. Determine the total current at input voltage = 3volt? 4. Explain trade-off and benefit of (fabrication and fan-out)? 5. Find the VTC of first and last inverters? se VDD= 6 V, VT.N= 1 V. Vp-1, KP 16 A/V 2 and KN = 40 u A/V^2. OX 696 a F/um 2 and CL = 1.5 pF?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Digital Integrated Circuit Design

Digital IC design is a procedural interaction that involves converting determinations and highlights into computerized blocks, which are then further transformed into basic circuits. A significant number of the imperatives related with advanced IC plan come from the foundry cycle and innovative restrictions.

Question

Q2) For the circuits shown in figures A and B:-
1. Find the width of PMOS transistors for symmetric CMOS Inverse?
2. Determine the total propagation time?
3. Determine the total current at input voltage = 3volt?
4. Explain trade-off and benefit of (fabrication and fan-out)?
5. Find the VTC of first and last inverters?
Use VDD= 6 V, VTN=1 V. Vp-1, KP 16 p A/V 2 and KN = 40µ A/V^2,
COX=696 a F/um^2 and CL = 1.5 pf?
Vi
VDD
W₁/2
VDD
44/2 4108/2
Figure A
(Attempt only four of the following)
VDD
VDD VDD
w/2 w2/2₂/2
Figure B
VDD
4[4/2 4/12/2 4[36/2 108/2

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P-channel Metal-Oxide Semiconductor (PMOS), N-channel Metal-Oxide Semiconductor (NMOS), and Complementary Metal-Oxide Semiconductor (CMOS)

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Problem 3 Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.
why the CMOS inverter circuit below contains two opposite- type MOSFET transistors (nMOS and pMOS)? and why called inverter circuit ?
a) A standard TTL inverter gate is shown in the figure. The supply voltage is 5V. Calculate the output voltage for both logic low and logic high input cases assuming input voltages respectively as 0.11V and 4.2V. Br= 130; BR = 0.24. You can make approximations when needed. Br = IcIs active region; BR = IE/ls inverse active region b) Assume you connect a resistor of 1.8K to the output of the circuit when the output is at logic high. What will be the change in the output voltage? 1302 R3 1.6k2 R, 4k2 Input o T, Output T, V, V. IkQ R,
J VDD RD - Vout You may have already noticed that the common source amplifier circuit is basically the same as the NMOS RTL inverter, just used for different purposes. The slope of the inverter VTC (Vout-Vin curve) is also the small- signal voltage gain of the common source amplifier. Assume VDD = 5V and Vin M₁ Vthn 0.7 V for the NMOS, use PSPICE to simulate the VTC (sweep from 0 to 5 V) of the common source amplifier for the following conditions: (a) Fix RD = 100 kN, L = 1 µm, W = 1 μm. Vary kn² = 20, 100, and 500 μА/V². (b) Fix kn' = 100 µA/V², R₁ = 100 kQ, L = 1 μm. Vary W = 1, 5, and 50 μm. (c) Fix kn' = 1 100 μA/V², L = 1 µm, W= 1 µm. Vary RD = 10 k2, 100 kQ, 1 MQ. Compare the slopes of the VTCs (which correspond to the voltage gains of the amplifiers) you obtained from the various conditions in a-c and explain your results.
Please show all work, thank you!
For the enhancement nMOSFET inverter circuit, V = 0.71 V, ip = 1.3 mA, UGS = 10.8 V, UDS = 6.0 V. UIN iD = 9 VDD RD VOUT (a) Find k. (3pts) (b) Is the transistor in triode or saturation mode? (1pt) (c) How much power is being dissipated by the transistor? 1pt
The NMOS and PMOS transistors have the following characteristics. The channel length is 350 nanometers. For NMOS: tox=50nm, Vtn-0.25V, un-560cm²/vsec, W=700nm, L=350nm For PMOS: tox-50nm, Vtp=-0.35V, up-240cm²/vsec, W=700nm, L=350nm a) Compute the NMOS gate capacitance CG in Femto Farads. b) Compute the resistance Rp for PMOS if the power supply voltage (Vdd) is 3.3 volts and the threshold voltage is 0.35 volts. Use the multiplying adjustment factor as 2.5.