1. Given equal doping densities, an n-channel FET will have a larger turn-on resistance than a similar p-channel FET. True False 2. In MOSFET fabrication, shorter channel length will lead to smaller power consumption and better conductivity in the triode region. True False 3. For binary logic circuit designed using an NMOS transistor, the Q-point is set to be either in the cut-off region (off) or the saturation region (on). True False
1.
Given equal doping densities, an n-channel FET will have a larger turn-on resistance than a similar p-channel FET.
In MOSFET fabrication, shorter channel length will lead to smaller power consumption and better conductivity in the triode region.
For binary logic circuit designed using an NMOS transistor, the Q-point is set to be either in the cut-off region (off) or the saturation region (on).
The four-resistor bias circuit is often used to place the MOS transistor in the triode region for the usage as an amplifier for analog signals.
MOSFET also known as metal-oxide-semiconductor field-effect transistor. MOSFET is a three-terminal device with drain (D), gate (G), and source (S) terminals.
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