1-To forward-bias a diode, (a) an external voltage is applied that is positive at the anode and negative at the cathode (b) an external voltage is applied that is negative at the anode and positive at the cathode (c) an external voltage is applied that is positive at the p region and negative at the n region (d) answers (a) and (c).
1-To forward-bias a diode, (a) an external voltage is applied that is positive at the anode and negative at the cathode (b) an external voltage is applied that is negative at the anode and positive at the cathode (c) an external voltage is applied that is positive at the p region and negative at the n region (d) answers (a) and (c).
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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1-To forward-bias a diode, (a) an external voltage is applied that is positive at the anode and negative at the cathode (b) an external voltage is applied that is negative at the anode and positive at the cathode (¢) an external voltage is applied that s positive at the p region and negative at the n region (d) answers (a) and (c). 2- For a silicon diode, the value of the forward-bias voltage typically (a) must be greater than 0.3 V (b) must be greater than 0.7 V (¢) depends on the width of the depletion region (d) depends on the concentration of majority carriers 3-When forward-biased, a diode (a) blocks current (b) conducts current () has a high resistance (d) drops a large voltage 4- A diode is normally operated in (a) reverse breakdown (b) the forward-bias region (c) the reverse-bias region (d) either (b) or (¢) 5- In the complete diode model, (a) the barrier potential is taken into account (b) the forward dynamic resistance is taken into account (c) the reverse resistance is taken into account (d) all of these 6-The average value of a half-wave rectified voltage with a peak value of 200 V is @637V (b)1272V (¢)141V (dOV
Transcribed Image Text:1-To forward-bias a diode,
(a) an external voltage is applied that is positive at the anode and negative at the cathode
(b) an external voltage is applied that is negative at the anode and positive at the cathode
(c) an external voltage is applied that is positive at the p region and negative at the n region
(d) answers (a) and (c).
2- For a silicon diode, the value of the forward-bias voltage typically
(a) must be greater than 0.3 V
(b) must be greater than 0.7 V
(c) depends on the width of the depletion region
(d) depends on the concentration of majority carriers
3-When forward-biased, a diode
(a) blocks current
(b) conducts current
(c) has a high resistance
(d) drops a large voltage
4- A diode is normally operated in
(a) reverse breakdown
(b) the forward-bias region
(c) the reverse-bias region
(d) either (b) or (c)
5- In the complete diode model,
(a) the barrier potential is taken into account
(b) the forward dynamic resistance is taken into account
(c) the reverse resistance is taken into account
(d) all of these
6-The average value of a half-wave rectified voltage with a peak value of 200 V is
(a) 63.7 V
(b) 127.2 V
(c) 141 V
(d) 0 V
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