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Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3

Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3
Transcribed Image Text:Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3
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