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1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox= 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor; accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Ear given at the top of the diagram is for part c)? +,x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E-22×10 Vom D ostev

1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox= 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor; accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Ear given at the top of the diagram is for part c)? +,x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E-22×10 Vom D ostev

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox = 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor: accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Eox given at the top of the diagram is for part c)? -x, x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E E-22×10 V/m 051eV E- E,
Transcribed Image Text:1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox = 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor: accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Eox given at the top of the diagram is for part c)? -x, x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E E-22×10 V/m 051eV E- E,
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