1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox= 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor; accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Ear given at the top of the diagram is for part c)? +,x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E-22×10 Vom D ostev

1) Let us consider a MOS capacitor with energy band diagram is shown. The body part is silicon at 300 K and the insulator is SiO, with a relative dielectric constant of Kox= 3.97 and a thickness of 3 nm. First let no charge at the oxide- semiconductor interface and the bulk of Si are grounded. a) In a semiconductor MOS capacitor, in which state is the semiconductor; accumulation, flat band, discharge or reversal? Explanation in detail. Calculate doping density and its type. b) What is the numerical value of the surface potential (Include the sign.) and surface electric field and its direction (note: Ear given at the top of the diagram is for part c)? +,x=0 c) What is the voltage of the electrostatic potential between the gate electrode and the semiconductor for given oxide electric field in diagram? Make sure to include the correct sign. (Hint: The answer is not zero.) E-22×10 Vom D ostev

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Given the relationship for semiconductor diode is : I = Io ( exp(eV/kT)-1). Proof the equation in case of PN junction.
Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OV
Take a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.
With constant current flowing in the forward direction in a small-signal silicon diode, the voltage across the diode decreases with temperature by about 2 mV/K. Such a diode has a voltage of 0.650 V, with a current of 1 mA at a temperature of 25°C. Find the diode voltage at 1 mA and a temperature of 175°C.
Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?
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A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.