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(1) Consider the circuit shown below. VIN A. B. C. D. 2ΚΩ 2 V 8 V -6 V -8 V If VIN = −4V, then VOUT is: 3k 4ΚΩ (3) In a transistor (2) At the base-emitter junctions of a transistor, one fin A. a reverse bias B. C. low resistance D. none of the above a wide depletion layer A. ICIE + IB B. IB IC+IE C. IE IC- IB D. IE= IC + IB VOUT

(1) Consider the circuit shown below. VIN A. B. C. D. 2ΚΩ 2 V 8 V -6 V -8 V If VIN = −4V, then VOUT is: 3k 4ΚΩ (3) In a transistor (2) At the base-emitter junctions of a transistor, one fin A. a reverse bias B. C. low resistance D. none of the above a wide depletion layer A. ICIE + IB B. IB IC+IE C. IE IC- IB D. IE= IC + IB VOUT

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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(1) Consider the circuit shown below. 3kN VIN 2ΚΩ A. 2 V B. 8 V C. -6 V D. -8 V If VIN = -4V, then VOUT is: 4ks (2) At the base-emitter junctions of a transistor, one finds A. a reverse bias B. C. D. a wide depletion layer low resistance none of the above (3) In a transistor A. IC IE + IB B. IB IC+IE C. IE IC - IB D. IE IC + IB VOUT
Transcribed Image Text:(1) Consider the circuit shown below. 3kN VIN 2ΚΩ A. 2 V B. 8 V C. -6 V D. -8 V If VIN = -4V, then VOUT is: 4ks (2) At the base-emitter junctions of a transistor, one finds A. a reverse bias B. C. D. a wide depletion layer low resistance none of the above (3) In a transistor A. IC IE + IB B. IB IC+IE C. IE IC - IB D. IE IC + IB VOUT
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