Nicole Thaete DAT 300 Project Two - Gap Analysis Visualization

FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…

Check all the correct statements. The forward voltage in diodes is larger than its reverse voltage. The forward voltage in diodes is due to the neutral zone between the two types of semiconductors used in diodes. The forward voltage in diodes is smaller than its reverse voltage. The forward voltage in diodes is due to the depletion region

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a. What is the voltage at point "h"?b. If the direction of each diode were reversed, what will happen?

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Will each of the following elements act as a donor or an acceptor when added to the indicated semiconducting material? Assume that the impurity elements are substitutional.