Week 13 HW - electrical properties

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Purdue University *

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Electrical Engineering

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Apr 3, 2024

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MSE 23000 Homework Assignment – Week 12 (10 pts) Electrical Properties Over the next week, think about the following problems and provide your responses as prompted below using this document as a template . Responses can be typed and/or inserted as scans or images ( e.g. , of hand-written calculations or sketches). These questions are reflective of typical exam questions – hence, the students who complete their homework assignments are the best prepared for their upcoming exams. Additionally, you are encouraged to attempt all homework problems before attending your weekly recitation so that you are prepared to ask questions and seek guidance & hints from your recitation instructor. This assignment is worth 10 points and will be graded for completion only. Submit your assignment as a single PDF document by using the appropriate link on Brightspace. You may choose to complete this assignment independently or work in groups but all submitted responses must be unique/your own work. Correct responses will be discussed in your next recitation lecture. (1 pt) 1. In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, intrinsic semiconductors, and insulations (and provide examples with associated conductivity values for each). (2 pts) 2. Callister 18.11: At room temperature (25°C) the electrical conductivity and electron mobility for copper are 6.0 x 10 7 (Ohm m) -1 and 0.0030 m 2 /V s, respectively. a. Compute the number of free electrons per cubic meter for copper at room temperature. b. What is the number of free electrons per copper atom? Assume a density of 8.9 g/cm 3 . Hint: See section 4.2, example problem 4.1. (1 pt) 3. Callister 18.15: Determine the electrical conductivity of a Cu-Ni alloy that has a yield strength of 125 MPa. You will find the following graphs useful, which are for copper-nickel alloys (Figures 7.16 and 18.9, respectively).
(1 pt) 4. Callister 18.21: At room temperature the electrical conductivity of PbTe is 500 (Ohm m) -1 , whereas the electron and hole mobilities are 0.16 and 0.075 m2/V s, respectively. Compute the intrinsic carrier concentration for PbTe at room temperature. (2 pts) 5. Callister 18.30: Germanium to which 5 x 10 22 m -3 Sb atoms have been added is an extrinsic semiconductor at room temperature, and virtually all the Sb atoms may be thought of as being ionized (that is, one charge carrier exists for each Sb atom). a. Is this material n -type or p -type? b. Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and 0.05 m 2 /V s, respectively. (1 pt) 6. Callister 18.32: Calculate the conductivity of intrinsic silicon at 100°C. You should use Figures 18.16 and 18.19 (shown below, respectively).
(2 pts) 7. Explain why the following statements are true: a. Upon heating a metal, the electrical conductivity decreases. b. Upon heating a semiconductor, the electrical conductivity increases.
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